Effect of growth conditions on the electrical and optical properties of AlxIn1-xAs (0.48<x<0.7)-Ga0.47In0.53As heterostructures
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| Veröffentlicht in: | Applied physics letters 1993-01, Vol.62 (1), p.66-68 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng ; jpn |
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| container_end_page | 68 |
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| container_issue | 1 |
| container_start_page | 66 |
| container_title | Applied physics letters |
| container_volume | 62 |
| creator | BROWN, A. S HENIGE, J. A SCHMITZ, A. E LARSON, L. E |
| description | |
| doi_str_mv | 10.1063/1.108821 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1993-01, Vol.62 (1), p.66-68 |
| issn | 0003-6951 1077-3118 |
| language | eng ; jpn |
| recordid | cdi_pascalfrancis_primary_4474687 |
| source | AIP Digital Archive |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physics |
| title | Effect of growth conditions on the electrical and optical properties of AlxIn1-xAs (0.48<x<0.7)-Ga0.47In0.53As heterostructures |
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