Observation of {111} ordering and [110] modulation in molecular beam epitaxial GaAs1-ySby layers: possible relationship to surface reconstruction occurring during layer growth

Observation of {111} ordering and [110] modulation in molecular beam epitaxial GaAs1-ySby layers: possible relationship to surface reconstruction occurring during layer growth

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Veröffentlicht in:Journal of applied physics 1990-03, Vol.67 (5), p.2310-2319
Hauptverfasser: MURGATROYD, I. J, NORMAN, A. G, BOOKER, G. R
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: structure, mechanical and thermal properties
Electron diffraction and scattering
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
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container_end_page 2319
container_issue 5
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container_title Journal of applied physics
container_volume 67
creator MURGATROYD, I. J
NORMAN, A. G
BOOKER, G. R
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doi_str_mv 10.1063/1.345526
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identifier ISSN: 0021-8979
ispartof Journal of applied physics, 1990-03, Vol.67 (5), p.2310-2319
issn 0021-8979
1089-7550
language eng
recordid cdi_pascalfrancis_primary_4363201
source AIP Digital Archive
subjects Condensed matter: structure, mechanical and thermal properties
Electron diffraction and scattering
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
title Observation of {111} ordering and [110] modulation in molecular beam epitaxial GaAs1-ySby layers: possible relationship to surface reconstruction occurring during layer growth
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