Hall effect and infrared absorption measurements on nitrogen donors in 6H-silicon carbide

Hall effect and infrared absorption measurements of n-type silicon carbide of the 6H polytype are employed to investigate the energy position of the ground state and excited states of the nitrogen donor. A donor model is proposed that assigns four series of absorption lines to electronic transitions...

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Veröffentlicht in:	Journal of applied physics 1992-10, Vol.72 (8), p.3708-3713
Hauptverfasser:	SUTTROP, W, PENSL, G, CHOYKE, W. J, STEIN, R, LEIBENZEDER, S
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Impurity and defect levels Physics
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description	Hall effect and infrared absorption measurements of n-type silicon carbide of the 6H polytype are employed to investigate the energy position of the ground state and excited states of the nitrogen donor. A donor model is proposed that assigns four series of absorption lines to electronic transitions of three donor species residing at three inequivalent lattice sites (h,k1,k2). A valley-orbit splitting of 12.6 meV is determined for donors on the hexagonal site h. For 2p0, 2p±, 3p0, and 3p± excited states, the effective-mass approximation is found to hold within experimental errors assuming a transverse and longitudinal effective electron mass of m⊥=(0.24±0.01) m0 and m∥=(0.34±0.02) m0, respectively.
doi_str_mv	10.1063/1.352318
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subjects	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Impurity and defect levels Physics
title	Hall effect and infrared absorption measurements on nitrogen donors in 6H-silicon carbide
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