The fabrication and electrical properties of modulated stacked capacitor for advanced DRAM applications
A capacitor structure, called the modulated stacked (MOST) capacitor, has been developed to increase the DRAM cell capacitance using surface modulation technology. The hemispherical-shaped polysilicon deposited on top of a thick polysilicon storage electrode is used as a mask to selectively form a d...
Gespeichert in:
| Veröffentlicht in: | IEEE electron device letters 1992-08, Vol.13 (8), p.430-432 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 432 |
|---|---|
| container_issue | 8 |
| container_start_page | 430 |
| container_title | IEEE electron device letters |
| container_volume | 13 |
| creator | Jun, Y.K. Rha, S.K. Kim, S.C. Roh, J.S. Kim, W.S. Lee, H.-G. |
| description | A capacitor structure, called the modulated stacked (MOST) capacitor, has been developed to increase the DRAM cell capacitance using surface modulation technology. The hemispherical-shaped polysilicon deposited on top of a thick polysilicon storage electrode is used as a mask to selectively form a deep groove in the electrode, hence significantly increasing the surface area. With this structure, the surface area of the storage electrode can be increased by as much as 8 times that of an ordinary stacked capacitor (STC) which takes the same chip area. Experimental results show that electrical properties such as leakage current, breakdown voltage, and TDDB are comparable to those of a conventional stacked capacitor.< > |
| doi_str_mv | 10.1109/55.192781 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_pascalfrancis_primary_4308103</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>192781</ieee_id><sourcerecordid>28669257</sourcerecordid><originalsourceid>FETCH-LOGICAL-c372t-dc3ed0c26e34cc17d2cd66b55aef8f5ce5b46169b473126a77e308f697629ef33</originalsourceid><addsrcrecordid>eNpFkM1LAzEQxYMoWKsHr55yEMHDar6zeyz1EyqC1POSTSa6uu2uSSr435uyRQ_DwPDmN28eQqeUXFFKqmspr2jFdEn30IRKWRZEKr6PJkQLWnBK1CE6ivGDECqEFhP0tnwH7E0TWmtS26-xWTsMHdi0nXR4CP0AIbUQce_xqnebziRwOCZjP3O3ZjC2TX3APpdx32Zt8_jmZfaEzTB0O2w8RgfedBFOdn2KXu9ul_OHYvF8_zifLQrLNUuFsxwcsUwBF9ZS7Zh1SjVSGvCllxZkIxRVVSM0p0wZrYGT0qtKK1aB53yKLkZuNv61gZjqVRstdJ1ZQ7-JNSuVqpjUWXg5Cm3oYwzg6yG0KxN-akrqbZS1lPUYZdae76Am5lB8yE-28W9BZAuUbG-fjbIWAP5xI-MXD0t8PQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28669257</pqid></control><display><type>article</type><title>The fabrication and electrical properties of modulated stacked capacitor for advanced DRAM applications</title><source>IEEE Electronic Library (IEL)</source><creator>Jun, Y.K. ; Rha, S.K. ; Kim, S.C. ; Roh, J.S. ; Kim, W.S. ; Lee, H.-G.</creator><creatorcontrib>Jun, Y.K. ; Rha, S.K. ; Kim, S.C. ; Roh, J.S. ; Kim, W.S. ; Lee, H.-G.</creatorcontrib><description>A capacitor structure, called the modulated stacked (MOST) capacitor, has been developed to increase the DRAM cell capacitance using surface modulation technology. The hemispherical-shaped polysilicon deposited on top of a thick polysilicon storage electrode is used as a mask to selectively form a deep groove in the electrode, hence significantly increasing the surface area. With this structure, the surface area of the storage electrode can be increased by as much as 8 times that of an ordinary stacked capacitor (STC) which takes the same chip area. Experimental results show that electrical properties such as leakage current, breakdown voltage, and TDDB are comparable to those of a conventional stacked capacitor.< ></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.192781</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Capacitance ; Capacitors ; Circuits ; Dielectric films ; Electrodes ; Electronics ; Etching ; Exact sciences and technology ; Fabrication ; Integrated circuits ; Integrated circuits by function (including memories and processors) ; Leakage current ; Random access memory ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Surface morphology</subject><ispartof>IEEE electron device letters, 1992-08, Vol.13 (8), p.430-432</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c372t-dc3ed0c26e34cc17d2cd66b55aef8f5ce5b46169b473126a77e308f697629ef33</citedby><cites>FETCH-LOGICAL-c372t-dc3ed0c26e34cc17d2cd66b55aef8f5ce5b46169b473126a77e308f697629ef33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/192781$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/192781$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4308103$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Jun, Y.K.</creatorcontrib><creatorcontrib>Rha, S.K.</creatorcontrib><creatorcontrib>Kim, S.C.</creatorcontrib><creatorcontrib>Roh, J.S.</creatorcontrib><creatorcontrib>Kim, W.S.</creatorcontrib><creatorcontrib>Lee, H.-G.</creatorcontrib><title>The fabrication and electrical properties of modulated stacked capacitor for advanced DRAM applications</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>A capacitor structure, called the modulated stacked (MOST) capacitor, has been developed to increase the DRAM cell capacitance using surface modulation technology. The hemispherical-shaped polysilicon deposited on top of a thick polysilicon storage electrode is used as a mask to selectively form a deep groove in the electrode, hence significantly increasing the surface area. With this structure, the surface area of the storage electrode can be increased by as much as 8 times that of an ordinary stacked capacitor (STC) which takes the same chip area. Experimental results show that electrical properties such as leakage current, breakdown voltage, and TDDB are comparable to those of a conventional stacked capacitor.< ></description><subject>Applied sciences</subject><subject>Capacitance</subject><subject>Capacitors</subject><subject>Circuits</subject><subject>Dielectric films</subject><subject>Electrodes</subject><subject>Electronics</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Integrated circuits</subject><subject>Integrated circuits by function (including memories and processors)</subject><subject>Leakage current</subject><subject>Random access memory</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Surface morphology</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNpFkM1LAzEQxYMoWKsHr55yEMHDar6zeyz1EyqC1POSTSa6uu2uSSr435uyRQ_DwPDmN28eQqeUXFFKqmspr2jFdEn30IRKWRZEKr6PJkQLWnBK1CE6ivGDECqEFhP0tnwH7E0TWmtS26-xWTsMHdi0nXR4CP0AIbUQce_xqnebziRwOCZjP3O3ZjC2TX3APpdx32Zt8_jmZfaEzTB0O2w8RgfedBFOdn2KXu9ul_OHYvF8_zifLQrLNUuFsxwcsUwBF9ZS7Zh1SjVSGvCllxZkIxRVVSM0p0wZrYGT0qtKK1aB53yKLkZuNv61gZjqVRstdJ1ZQ7-JNSuVqpjUWXg5Cm3oYwzg6yG0KxN-akrqbZS1lPUYZdae76Am5lB8yE-28W9BZAuUbG-fjbIWAP5xI-MXD0t8PQ</recordid><startdate>19920801</startdate><enddate>19920801</enddate><creator>Jun, Y.K.</creator><creator>Rha, S.K.</creator><creator>Kim, S.C.</creator><creator>Roh, J.S.</creator><creator>Kim, W.S.</creator><creator>Lee, H.-G.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19920801</creationdate><title>The fabrication and electrical properties of modulated stacked capacitor for advanced DRAM applications</title><author>Jun, Y.K. ; Rha, S.K. ; Kim, S.C. ; Roh, J.S. ; Kim, W.S. ; Lee, H.-G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c372t-dc3ed0c26e34cc17d2cd66b55aef8f5ce5b46169b473126a77e308f697629ef33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Applied sciences</topic><topic>Capacitance</topic><topic>Capacitors</topic><topic>Circuits</topic><topic>Dielectric films</topic><topic>Electrodes</topic><topic>Electronics</topic><topic>Etching</topic><topic>Exact sciences and technology</topic><topic>Fabrication</topic><topic>Integrated circuits</topic><topic>Integrated circuits by function (including memories and processors)</topic><topic>Leakage current</topic><topic>Random access memory</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Surface morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jun, Y.K.</creatorcontrib><creatorcontrib>Rha, S.K.</creatorcontrib><creatorcontrib>Kim, S.C.</creatorcontrib><creatorcontrib>Roh, J.S.</creatorcontrib><creatorcontrib>Kim, W.S.</creatorcontrib><creatorcontrib>Lee, H.-G.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jun, Y.K.</au><au>Rha, S.K.</au><au>Kim, S.C.</au><au>Roh, J.S.</au><au>Kim, W.S.</au><au>Lee, H.-G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The fabrication and electrical properties of modulated stacked capacitor for advanced DRAM applications</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1992-08-01</date><risdate>1992</risdate><volume>13</volume><issue>8</issue><spage>430</spage><epage>432</epage><pages>430-432</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>A capacitor structure, called the modulated stacked (MOST) capacitor, has been developed to increase the DRAM cell capacitance using surface modulation technology. The hemispherical-shaped polysilicon deposited on top of a thick polysilicon storage electrode is used as a mask to selectively form a deep groove in the electrode, hence significantly increasing the surface area. With this structure, the surface area of the storage electrode can be increased by as much as 8 times that of an ordinary stacked capacitor (STC) which takes the same chip area. Experimental results show that electrical properties such as leakage current, breakdown voltage, and TDDB are comparable to those of a conventional stacked capacitor.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/55.192781</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1992-08, Vol.13 (8), p.430-432 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_4308103 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Capacitance Capacitors Circuits Dielectric films Electrodes Electronics Etching Exact sciences and technology Fabrication Integrated circuits Integrated circuits by function (including memories and processors) Leakage current Random access memory Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Surface morphology |
| title | The fabrication and electrical properties of modulated stacked capacitor for advanced DRAM applications |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T01%3A03%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20fabrication%20and%20electrical%20properties%20of%20modulated%20stacked%20capacitor%20for%20advanced%20DRAM%20applications&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Jun,%20Y.K.&rft.date=1992-08-01&rft.volume=13&rft.issue=8&rft.spage=430&rft.epage=432&rft.pages=430-432&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/55.192781&rft_dat=%3Cproquest_RIE%3E28669257%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28669257&rft_id=info:pmid/&rft_ieee_id=192781&rfr_iscdi=true |