Biasing characteristics of unshielded, boundary exchange-coupled SAL/MR sensors
A magnetoresistive (MR) sensor with patterned exchange-biasing layer at its end regions exhibits quite and stable responses. A mathematical model simulating an unshielded, boundary exchange-biased SAL/MR structure is developed. The modeled results are in good agreement with the experimental data. Ho...
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Veröffentlicht in: | IEEE transactions on magnetics 1993-11, Vol.29 (6), p.3873-3875 |
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creator | Liao, S.H. Yuan, S.W. Bertram, H.N. |
description | A magnetoresistive (MR) sensor with patterned exchange-biasing layer at its end regions exhibits quite and stable responses. A mathematical model simulating an unshielded, boundary exchange-biased SAL/MR structure is developed. The modeled results are in good agreement with the experimental data. However, biasing characteristics are quite different from modeled results assuming infinitely long stripes. For the boundary exchange-coupled SAL/MR design, the strip height has a significant impact on the biasing characteristics and the effect becomes even more pronounced as the track width is further reduced.< > |
doi_str_mv | 10.1109/20.281327 |
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A mathematical model simulating an unshielded, boundary exchange-biased SAL/MR structure is developed. The modeled results are in good agreement with the experimental data. However, biasing characteristics are quite different from modeled results assuming infinitely long stripes. For the boundary exchange-coupled SAL/MR design, the strip height has a significant impact on the biasing characteristics and the effect becomes even more pronounced as the track width is further reduced.< ></description><identifier>ISSN: 0018-9464</identifier><identifier>EISSN: 1941-0069</identifier><identifier>DOI: 10.1109/20.281327</identifier><identifier>CODEN: IEMGAQ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Anisotropic magnetoresistance ; Applied sciences ; Conductivity ; Demagnetization ; Electronics ; Exact sciences and technology ; Magnetic and optical mass memories ; Magnetic sensors ; Magnetization ; Mathematical model ; Predictive models ; Semiconductor device modeling ; Sensor phenomena and characterization ; Storage and reproduction of information ; Switches</subject><ispartof>IEEE transactions on magnetics, 1993-11, Vol.29 (6), p.3873-3875</ispartof><rights>1994 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c306t-16c5627ca6900eb8d2b1e486466768d94f2f18edc5a29b8b551b95a611e05b503</citedby><cites>FETCH-LOGICAL-c306t-16c5627ca6900eb8d2b1e486466768d94f2f18edc5a29b8b551b95a611e05b503</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/281327$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,792,23909,23910,25118,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/281327$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4265658$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Liao, S.H.</creatorcontrib><creatorcontrib>Yuan, S.W.</creatorcontrib><creatorcontrib>Bertram, H.N.</creatorcontrib><title>Biasing characteristics of unshielded, boundary exchange-coupled SAL/MR sensors</title><title>IEEE transactions on magnetics</title><addtitle>TMAG</addtitle><description>A magnetoresistive (MR) sensor with patterned exchange-biasing layer at its end regions exhibits quite and stable responses. A mathematical model simulating an unshielded, boundary exchange-biased SAL/MR structure is developed. The modeled results are in good agreement with the experimental data. However, biasing characteristics are quite different from modeled results assuming infinitely long stripes. For the boundary exchange-coupled SAL/MR design, the strip height has a significant impact on the biasing characteristics and the effect becomes even more pronounced as the track width is further reduced.< ></description><subject>Anisotropic magnetoresistance</subject><subject>Applied sciences</subject><subject>Conductivity</subject><subject>Demagnetization</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Magnetic and optical mass memories</subject><subject>Magnetic sensors</subject><subject>Magnetization</subject><subject>Mathematical model</subject><subject>Predictive models</subject><subject>Semiconductor device modeling</subject><subject>Sensor phenomena and characterization</subject><subject>Storage and reproduction of information</subject><subject>Switches</subject><issn>0018-9464</issn><issn>1941-0069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9kE1Lw0AQhhdRsFYPXj3lIIJg2p3N7nZzrMUvqBT8OIfNZtKupEndSUD_vZGUnoZhnveBeRm7BD4B4OlU8IkwkIjZERtBKiHmXKfHbMQ5mDiVWp6yM6KvfpUK-Iit7r0lX68jt7HBuhaDp9Y7ipoy6mraeKwKLO6ivOnqwobfCH96sl5j7JpuV2ERvc-X09e3iLCmJtA5OyltRXixn2P2-fjwsXiOl6unl8V8GbuE6zYG7ZQWM2d1yjnmphA5oDRaaj3TpkhlKUowWDhlRZqbXCnIU2U1AHKVK56M2c3g3YXmu0Nqs60nh1Vla2w6yoQRIBKlevB2AF1oiAKW2S74bf9JBjz7rywTPBsq69nrvdSSs1UZbO08HQJSaKWV6bGrAfOIeLjuHX_eDXIi</recordid><startdate>19931101</startdate><enddate>19931101</enddate><creator>Liao, S.H.</creator><creator>Yuan, S.W.</creator><creator>Bertram, H.N.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19931101</creationdate><title>Biasing characteristics of unshielded, boundary exchange-coupled SAL/MR sensors</title><author>Liao, S.H. ; Yuan, S.W. ; Bertram, H.N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c306t-16c5627ca6900eb8d2b1e486466768d94f2f18edc5a29b8b551b95a611e05b503</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Anisotropic magnetoresistance</topic><topic>Applied sciences</topic><topic>Conductivity</topic><topic>Demagnetization</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Magnetic and optical mass memories</topic><topic>Magnetic sensors</topic><topic>Magnetization</topic><topic>Mathematical model</topic><topic>Predictive models</topic><topic>Semiconductor device modeling</topic><topic>Sensor phenomena and characterization</topic><topic>Storage and reproduction of information</topic><topic>Switches</topic><toplevel>online_resources</toplevel><creatorcontrib>Liao, S.H.</creatorcontrib><creatorcontrib>Yuan, S.W.</creatorcontrib><creatorcontrib>Bertram, H.N.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on magnetics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Liao, S.H.</au><au>Yuan, S.W.</au><au>Bertram, H.N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Biasing characteristics of unshielded, boundary exchange-coupled SAL/MR sensors</atitle><jtitle>IEEE transactions on magnetics</jtitle><stitle>TMAG</stitle><date>1993-11-01</date><risdate>1993</risdate><volume>29</volume><issue>6</issue><spage>3873</spage><epage>3875</epage><pages>3873-3875</pages><issn>0018-9464</issn><eissn>1941-0069</eissn><coden>IEMGAQ</coden><abstract>A magnetoresistive (MR) sensor with patterned exchange-biasing layer at its end regions exhibits quite and stable responses. A mathematical model simulating an unshielded, boundary exchange-biased SAL/MR structure is developed. The modeled results are in good agreement with the experimental data. However, biasing characteristics are quite different from modeled results assuming infinitely long stripes. For the boundary exchange-coupled SAL/MR design, the strip height has a significant impact on the biasing characteristics and the effect becomes even more pronounced as the track width is further reduced.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/20.281327</doi><tpages>3</tpages></addata></record> |
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subjects | Anisotropic magnetoresistance Applied sciences Conductivity Demagnetization Electronics Exact sciences and technology Magnetic and optical mass memories Magnetic sensors Magnetization Mathematical model Predictive models Semiconductor device modeling Sensor phenomena and characterization Storage and reproduction of information Switches |
title | Biasing characteristics of unshielded, boundary exchange-coupled SAL/MR sensors |
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