Effect of residual gases on residue formation during tungsten/TiN/Ti etching using SF6 and Cl2 gas chemistry

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Veröffentlicht in:	Japanese journal of applied physics 1994, Vol.33 (7A), p.L918-L920
Hauptverfasser:	TAE HYUK AHN, SHIN WOO NAM, KYUNG JIN MIN, CHEOL CHUNG
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_end_page	L920
container_issue	7A
container_start_page	L918
container_title	Japanese journal of applied physics
container_volume	33
creator	TAE HYUK AHN SHIN WOO NAM KYUNG JIN MIN CHEOL CHUNG
description
doi_str_mv	10.1143/jjap.33.l918
format	Article
fullrecord	<record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_4258781</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>4258781</sourcerecordid><originalsourceid>FETCH-LOGICAL-j248t-f5550b1e4e356a5f9cd87b9adee8cf743150ba16202fef29e9a9b25a46b580323</originalsourceid><addsrcrecordid>eNotjD1vwjAYhK2qlUppt_4AD10D_kzssUJQKqF2KJ3RG-c1OAoB2c7Av29QGe5O95x0hLxyNuNcyXnbwnkm5ayz3NyRCZeqKhQr9T2ZMCZ4oawQj-QppXaspVZ8Qrql9-gyPXkaMYVmgI7uIWGip_5GkPpTPEIOI2mGGPo9zUO_Txn7-TZ8jaKY3eHKh3T1n1VJoW_oohPXL-oOeAwpx8szefDQJXy55ZT8rpbbxbrYfH98Lt43RSuUyYXXWrOao0KpS9DeusZUtYUG0ThfKcnHGXgpmPDohUULthYaVFlrw6SQU_L2_3uG5KDzEXoX0u4cwxHiZaeENpXh8g9l0FuS</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effect of residual gases on residue formation during tungsten/TiN/Ti etching using SF6 and Cl2 gas chemistry</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>TAE HYUK AHN ; SHIN WOO NAM ; KYUNG JIN MIN ; CHEOL CHUNG</creator><creatorcontrib>TAE HYUK AHN ; SHIN WOO NAM ; KYUNG JIN MIN ; CHEOL CHUNG</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.33.l918</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Microelectronic fabrication (materials and surfaces technology) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Japanese journal of applied physics, 1994, Vol.33 (7A), p.L918-L920</ispartof><rights>1994 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4258781$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>TAE HYUK AHN</creatorcontrib><creatorcontrib>SHIN WOO NAM</creatorcontrib><creatorcontrib>KYUNG JIN MIN</creatorcontrib><creatorcontrib>CHEOL CHUNG</creatorcontrib><title>Effect of residual gases on residue formation during tungsten/TiN/Ti etching using SF6 and Cl2 gas chemistry</title><title>Japanese journal of applied physics</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNotjD1vwjAYhK2qlUppt_4AD10D_kzssUJQKqF2KJ3RG-c1OAoB2c7Av29QGe5O95x0hLxyNuNcyXnbwnkm5ayz3NyRCZeqKhQr9T2ZMCZ4oawQj-QppXaspVZ8Qrql9-gyPXkaMYVmgI7uIWGip_5GkPpTPEIOI2mGGPo9zUO_Txn7-TZ8jaKY3eHKh3T1n1VJoW_oohPXL-oOeAwpx8szefDQJXy55ZT8rpbbxbrYfH98Lt43RSuUyYXXWrOao0KpS9DeusZUtYUG0ThfKcnHGXgpmPDohUULthYaVFlrw6SQU_L2_3uG5KDzEXoX0u4cwxHiZaeENpXh8g9l0FuS</recordid><startdate>1994</startdate><enddate>1994</enddate><creator>TAE HYUK AHN</creator><creator>SHIN WOO NAM</creator><creator>KYUNG JIN MIN</creator><creator>CHEOL CHUNG</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope></search><sort><creationdate>1994</creationdate><title>Effect of residual gases on residue formation during tungsten/TiN/Ti etching using SF6 and Cl2 gas chemistry</title><author>TAE HYUK AHN ; SHIN WOO NAM ; KYUNG JIN MIN ; CHEOL CHUNG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-j248t-f5550b1e4e356a5f9cd87b9adee8cf743150ba16202fef29e9a9b25a46b580323</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>TAE HYUK AHN</creatorcontrib><creatorcontrib>SHIN WOO NAM</creatorcontrib><creatorcontrib>KYUNG JIN MIN</creatorcontrib><creatorcontrib>CHEOL CHUNG</creatorcontrib><collection>Pascal-Francis</collection><jtitle>Japanese journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>TAE HYUK AHN</au><au>SHIN WOO NAM</au><au>KYUNG JIN MIN</au><au>CHEOL CHUNG</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of residual gases on residue formation during tungsten/TiN/Ti etching using SF6 and Cl2 gas chemistry</atitle><jtitle>Japanese journal of applied physics</jtitle><date>1994</date><risdate>1994</risdate><volume>33</volume><issue>7A</issue><spage>L918</spage><epage>L920</epage><pages>L918-L920</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.33.l918</doi></addata></record>
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identifier	ISSN: 0021-4922
ispartof	Japanese journal of applied physics, 1994, Vol.33 (7A), p.L918-L920
issn	0021-4922 1347-4065
language	eng
recordid	cdi_pascalfrancis_primary_4258781
source	IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title	Effect of residual gases on residue formation during tungsten/TiN/Ti etching using SF6 and Cl2 gas chemistry
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T15%3A06%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20residual%20gases%20on%20residue%20formation%20during%20tungsten/TiN/Ti%20etching%20using%20SF6%20and%20Cl2%20gas%20chemistry&rft.jtitle=Japanese%20journal%20of%20applied%20physics&rft.au=TAE%20HYUK%20AHN&rft.date=1994&rft.volume=33&rft.issue=7A&rft.spage=L918&rft.epage=L920&rft.pages=L918-L920&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPA5&rft_id=info:doi/10.1143/jjap.33.l918&rft_dat=%3Cpascalfrancis%3E4258781%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true