An ultra-high-speed ECL-BiCMOS technology with silicon fillet self-aligned contacts

We have developed a half-micron super self-aligned BiCMOS technology for high speed application. A new SIlicon Fillet self-aligned conTact (SIFT) process is integrated in this BiCMOS technology enabling high speed performances for both CMOS and ECL bipolar circuits. In this paper, we describe the pr...

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Veröffentlicht in:	IEEE transactions on electron devices 1994-09, Vol.41 (9), p.1546-1555
Hauptverfasser:	Liu, T.M., Chin, G.M., Jeon, D.Y., Morris, M.D., Archer, V.D., Johnson, R.W., Tarsia, M., Kim, H.H., Cerullo, M., Lee, K.F., Sung, J.J., Kei-Shun Lau, Tzu-Yin Chiu, Voshchenkov, A.M., Swartz, R.G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences BiCMOS integrated circuits Circuit optimization CMOS process CMOS technology Current density Delay Electronics Exact sciences and technology Integrated circuit technology Process design Ring oscillators Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Transistors
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