An experimental high-density DRAM cell with a built-in gain stage: The 1993 European solid-state circuits conference

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Veröffentlicht in:	IEEE journal of solid-state circuits 1994, Vol.29 (8), p.978-981
Hauptverfasser:	WONCHAN KIM, JOONGSIK KIH, GYUDONG KIM, SANGHUN JUNG, GIJUNG AHN
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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creator	WONCHAN KIM JOONGSIK KIH GYUDONG KIM SANGHUN JUNG GIJUNG AHN
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subjects	Applied sciences Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title	An experimental high-density DRAM cell with a built-in gain stage: The 1993 European solid-state circuits conference
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