Improved fluorinated hydrogenated amorphous silicon alloys prepared using the hot-plasma-box glow-discharge technique
The structural, optical and electrical properties of fluorinated hydrogenated amorphous silicon alloy thin films grown from a SiF 4 -SiH 4 -H 2 gas mixture in a new hot-plasma-box (HPB) glow-discharge reactor are reported. We observed that the-HPB technique provides almost four times better growth r...
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| Veröffentlicht in: | Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties. Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1994-08, Vol.70 (2), p.263-276 |
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| container_title | Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties. |
| container_volume | 70 |
| creator | Bhusari, D. M. Kumbhar, A. S. Kshirsagar, S. T. |
| description | The structural, optical and electrical properties of fluorinated hydrogenated amorphous silicon alloy thin films grown from a SiF
4
-SiH
4
-H
2
gas mixture in a new hot-plasma-box (HPB) glow-discharge reactor are reported. We observed that the-HPB technique provides almost four times better growth rates (as high as 2-4 Å s
−1
) for r.f. powers as low as 200mW cm
−2
together with an order-of-magnitude improvement in the photoconductivity gain (to as high as 2 × 10
5
) compared with films deposited using the conventional r.f. plasma chemical vapour deposition technique and the same gas mixture. Furthermore, Raman scattering measurements indicate that there is a substantial enhancement of the structural short-range order (SRO) in these alloy films prepared in the HPB. The improvement in the optoelectronic properties of the films and its correlation with the improvement of SRO are discussed in this paper. |
| doi_str_mv | 10.1080/01418639408241805 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_pasca</sourceid><recordid>TN_cdi_pascalfrancis_primary_4179773</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1298091748</sourcerecordid><originalsourceid>FETCH-LOGICAL-c338t-661da9f60a21ce72ba2c2794fe140608a8cef2f5f13d7afd593712df4561ce613</originalsourceid><addsrcrecordid>eNp1kE9LxDAQxYsoKLofwFtBr9VMkk1S8CLiPxC86LnMpsk2kjY1adX99kZWvYiXmRf4vXnkFcUxkDMgipwT4KAEqzlRNCuy3CkOgAtWCQ5yN2smeEUV0P1ikZJbEUKZZHkeFPN9P8bwZtrS-jlEN-CUdbdpY1ib7QP7EMcuzKlMzjsdhhK9D5tUjtGMGDMxJzesy6kzZRemavSYeqxW4aNc-_BetS7pDuPalJPR3eBeZ3NU7Fn0ySy-92HxfHP9dHVXPTze3l9dPlSaMTVVQkCLtRUEKWgj6QqpprLm1gAngihU2lhqlxZYK9G2y5pJoK3lS5F5AeywONnezX_MsWlqXsIchxzZAK0VqUFylSnYUjqGlKKxzRhdj3HTAGm-Cm7-FJw9p9-XMWn0NuKgXfo15t5rKVnGLraYG2yIPb6H6Ntmwo0P8cfD_k_5BG5wj3k</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1298091748</pqid></control><display><type>article</type><title>Improved fluorinated hydrogenated amorphous silicon alloys prepared using the hot-plasma-box glow-discharge technique</title><source>Periodicals Index Online</source><source>Access via Taylor & Francis</source><creator>Bhusari, D. M. ; Kumbhar, A. S. ; Kshirsagar, S. T.</creator><creatorcontrib>Bhusari, D. M. ; Kumbhar, A. S. ; Kshirsagar, S. T.</creatorcontrib><description>The structural, optical and electrical properties of fluorinated hydrogenated amorphous silicon alloy thin films grown from a SiF
4
-SiH
4
-H
2
gas mixture in a new hot-plasma-box (HPB) glow-discharge reactor are reported. We observed that the-HPB technique provides almost four times better growth rates (as high as 2-4 Å s
−1
) for r.f. powers as low as 200mW cm
−2
together with an order-of-magnitude improvement in the photoconductivity gain (to as high as 2 × 10
5
) compared with films deposited using the conventional r.f. plasma chemical vapour deposition technique and the same gas mixture. Furthermore, Raman scattering measurements indicate that there is a substantial enhancement of the structural short-range order (SRO) in these alloy films prepared in the HPB. The improvement in the optoelectronic properties of the films and its correlation with the improvement of SRO are discussed in this paper.</description><identifier>ISSN: 1364-2812</identifier><identifier>ISSN: 0958-6644</identifier><identifier>ISSN: 0141-8637</identifier><identifier>EISSN: 1463-6417</identifier><identifier>DOI: 10.1080/01418639408241805</identifier><language>eng</language><publisher>London: Taylor & Francis Group</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Conductivity of specific materials ; Disordered solids ; Electronic transport in condensed matter ; Exact sciences and technology ; Infrared and Raman spectra ; Infrared and raman spectra and scattering ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Photoconduction and photovoltaic effects ; Photoconduction and photovoltaic effects; photodielectric effects ; Physics</subject><ispartof>Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1994-08, Vol.70 (2), p.263-276</ispartof><rights>Copyright Taylor & Francis Group, LLC 1994</rights><rights>1994 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c338t-661da9f60a21ce72ba2c2794fe140608a8cef2f5f13d7afd593712df4561ce613</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.tandfonline.com/doi/pdf/10.1080/01418639408241805$$EPDF$$P50$$Ginformaworld$$H</linktopdf><linktohtml>$$Uhttps://www.tandfonline.com/doi/full/10.1080/01418639408241805$$EHTML$$P50$$Ginformaworld$$H</linktohtml><link.rule.ids>314,780,784,27869,27924,27925,59647,60436</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4179773$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Bhusari, D. M.</creatorcontrib><creatorcontrib>Kumbhar, A. S.</creatorcontrib><creatorcontrib>Kshirsagar, S. T.</creatorcontrib><title>Improved fluorinated hydrogenated amorphous silicon alloys prepared using the hot-plasma-box glow-discharge technique</title><title>Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties.</title><description>The structural, optical and electrical properties of fluorinated hydrogenated amorphous silicon alloy thin films grown from a SiF
4
-SiH
4
-H
2
gas mixture in a new hot-plasma-box (HPB) glow-discharge reactor are reported. We observed that the-HPB technique provides almost four times better growth rates (as high as 2-4 Å s
−1
) for r.f. powers as low as 200mW cm
−2
together with an order-of-magnitude improvement in the photoconductivity gain (to as high as 2 × 10
5
) compared with films deposited using the conventional r.f. plasma chemical vapour deposition technique and the same gas mixture. Furthermore, Raman scattering measurements indicate that there is a substantial enhancement of the structural short-range order (SRO) in these alloy films prepared in the HPB. The improvement in the optoelectronic properties of the films and its correlation with the improvement of SRO are discussed in this paper.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Conductivity of specific materials</subject><subject>Disordered solids</subject><subject>Electronic transport in condensed matter</subject><subject>Exact sciences and technology</subject><subject>Infrared and Raman spectra</subject><subject>Infrared and raman spectra and scattering</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Photoconduction and photovoltaic effects</subject><subject>Photoconduction and photovoltaic effects; photodielectric effects</subject><subject>Physics</subject><issn>1364-2812</issn><issn>0958-6644</issn><issn>0141-8637</issn><issn>1463-6417</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><sourceid>K30</sourceid><recordid>eNp1kE9LxDAQxYsoKLofwFtBr9VMkk1S8CLiPxC86LnMpsk2kjY1adX99kZWvYiXmRf4vXnkFcUxkDMgipwT4KAEqzlRNCuy3CkOgAtWCQ5yN2smeEUV0P1ikZJbEUKZZHkeFPN9P8bwZtrS-jlEN-CUdbdpY1ib7QP7EMcuzKlMzjsdhhK9D5tUjtGMGDMxJzesy6kzZRemavSYeqxW4aNc-_BetS7pDuPalJPR3eBeZ3NU7Fn0ySy-92HxfHP9dHVXPTze3l9dPlSaMTVVQkCLtRUEKWgj6QqpprLm1gAngihU2lhqlxZYK9G2y5pJoK3lS5F5AeywONnezX_MsWlqXsIchxzZAK0VqUFylSnYUjqGlKKxzRhdj3HTAGm-Cm7-FJw9p9-XMWn0NuKgXfo15t5rKVnGLraYG2yIPb6H6Ntmwo0P8cfD_k_5BG5wj3k</recordid><startdate>19940801</startdate><enddate>19940801</enddate><creator>Bhusari, D. M.</creator><creator>Kumbhar, A. S.</creator><creator>Kshirsagar, S. T.</creator><general>Taylor & Francis Group</general><general>Taylor & Francis</general><general>Taylor and Francis</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>HAGHG</scope><scope>IZSXY</scope><scope>K30</scope><scope>PAAUG</scope><scope>PAWHS</scope><scope>PAWZZ</scope><scope>PAXOH</scope><scope>PBHAV</scope><scope>PBQSW</scope><scope>PBYQZ</scope><scope>PCIWU</scope><scope>PCMID</scope><scope>PCZJX</scope><scope>PDGRG</scope><scope>PDWWI</scope><scope>PETMR</scope><scope>PFVGT</scope><scope>PGXDX</scope><scope>PIHIL</scope><scope>PISVA</scope><scope>PJCTQ</scope><scope>PJTMS</scope><scope>PLCHJ</scope><scope>PMHAD</scope><scope>PNQDJ</scope><scope>POUND</scope><scope>PPLAD</scope><scope>PQAPC</scope><scope>PQCAN</scope><scope>PQCMW</scope><scope>PQEME</scope><scope>PQHKH</scope><scope>PQMID</scope><scope>PQNCT</scope><scope>PQNET</scope><scope>PQSCT</scope><scope>PQSET</scope><scope>PSVJG</scope><scope>PVMQY</scope><scope>PZGFC</scope></search><sort><creationdate>19940801</creationdate><title>Improved fluorinated hydrogenated amorphous silicon alloys prepared using the hot-plasma-box glow-discharge technique</title><author>Bhusari, D. M. ; Kumbhar, A. S. ; Kshirsagar, S. T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-661da9f60a21ce72ba2c2794fe140608a8cef2f5f13d7afd593712df4561ce613</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Conductivity of specific materials</topic><topic>Disordered solids</topic><topic>Electronic transport in condensed matter</topic><topic>Exact sciences and technology</topic><topic>Infrared and Raman spectra</topic><topic>Infrared and raman spectra and scattering</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Photoconduction and photovoltaic effects</topic><topic>Photoconduction and photovoltaic effects; photodielectric effects</topic><topic>Physics</topic><toplevel>online_resources</toplevel><creatorcontrib>Bhusari, D. M.</creatorcontrib><creatorcontrib>Kumbhar, A. S.</creatorcontrib><creatorcontrib>Kshirsagar, S. T.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Periodicals Index Online Segment 12</collection><collection>Periodicals Index Online Segment 30</collection><collection>Periodicals Index Online</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - West</collection><collection>Primary Sources Access (Plan D) - International</collection><collection>Primary Sources Access & Build (Plan A) - MEA</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Midwest</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Northeast</collection><collection>Primary Sources Access (Plan D) - Southeast</collection><collection>Primary Sources Access (Plan D) - North Central</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Southeast</collection><collection>Primary Sources Access (Plan D) - South Central</collection><collection>Primary Sources Access & Build (Plan A) - UK / I</collection><collection>Primary Sources Access (Plan D) - Canada</collection><collection>Primary Sources Access (Plan D) - EMEALA</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - North Central</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - South Central</collection><collection>Primary Sources Access & Build (Plan A) - International</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - International</collection><collection>Primary Sources Access (Plan D) - West</collection><collection>Periodicals Index Online Segments 1-50</collection><collection>Primary Sources Access (Plan D) - APAC</collection><collection>Primary Sources Access (Plan D) - Midwest</collection><collection>Primary Sources Access (Plan D) - MEA</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Canada</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - UK / I</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - EMEALA</collection><collection>Primary Sources Access & Build (Plan A) - APAC</collection><collection>Primary Sources Access & Build (Plan A) - Canada</collection><collection>Primary Sources Access & Build (Plan A) - West</collection><collection>Primary Sources Access & Build (Plan A) - EMEALA</collection><collection>Primary Sources Access (Plan D) - Northeast</collection><collection>Primary Sources Access & Build (Plan A) - Midwest</collection><collection>Primary Sources Access & Build (Plan A) - North Central</collection><collection>Primary Sources Access & Build (Plan A) - Northeast</collection><collection>Primary Sources Access & Build (Plan A) - South Central</collection><collection>Primary Sources Access & Build (Plan A) - Southeast</collection><collection>Primary Sources Access (Plan D) - UK / I</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - APAC</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - MEA</collection><jtitle>Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties.</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bhusari, D. M.</au><au>Kumbhar, A. S.</au><au>Kshirsagar, S. T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improved fluorinated hydrogenated amorphous silicon alloys prepared using the hot-plasma-box glow-discharge technique</atitle><jtitle>Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties.</jtitle><date>1994-08-01</date><risdate>1994</risdate><volume>70</volume><issue>2</issue><spage>263</spage><epage>276</epage><pages>263-276</pages><issn>1364-2812</issn><issn>0958-6644</issn><issn>0141-8637</issn><eissn>1463-6417</eissn><abstract>The structural, optical and electrical properties of fluorinated hydrogenated amorphous silicon alloy thin films grown from a SiF
4
-SiH
4
-H
2
gas mixture in a new hot-plasma-box (HPB) glow-discharge reactor are reported. We observed that the-HPB technique provides almost four times better growth rates (as high as 2-4 Å s
−1
) for r.f. powers as low as 200mW cm
−2
together with an order-of-magnitude improvement in the photoconductivity gain (to as high as 2 × 10
5
) compared with films deposited using the conventional r.f. plasma chemical vapour deposition technique and the same gas mixture. Furthermore, Raman scattering measurements indicate that there is a substantial enhancement of the structural short-range order (SRO) in these alloy films prepared in the HPB. The improvement in the optoelectronic properties of the films and its correlation with the improvement of SRO are discussed in this paper.</abstract><cop>London</cop><pub>Taylor & Francis Group</pub><doi>10.1080/01418639408241805</doi><tpages>14</tpages></addata></record> |
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| identifier | ISSN: 1364-2812 |
| ispartof | Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1994-08, Vol.70 (2), p.263-276 |
| issn | 1364-2812 0958-6644 0141-8637 1463-6417 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_4179773 |
| source | Periodicals Index Online; Access via Taylor & Francis |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity of specific materials Disordered solids Electronic transport in condensed matter Exact sciences and technology Infrared and Raman spectra Infrared and raman spectra and scattering Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoconduction and photovoltaic effects Photoconduction and photovoltaic effects photodielectric effects Physics |
| title | Improved fluorinated hydrogenated amorphous silicon alloys prepared using the hot-plasma-box glow-discharge technique |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T23%3A28%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Improved%20fluorinated%20hydrogenated%20amorphous%20silicon%20alloys%20prepared%20using%20the%20hot-plasma-box%20glow-discharge%20technique&rft.jtitle=Philosophical%20magazine.%20B,%20Physics%20of%20condensed%20matter.%20Structural,%20electronic,%20optical,%20and%20magnetic%20properties.&rft.au=Bhusari,%20D.%20M.&rft.date=1994-08-01&rft.volume=70&rft.issue=2&rft.spage=263&rft.epage=276&rft.pages=263-276&rft.issn=1364-2812&rft.eissn=1463-6417&rft_id=info:doi/10.1080/01418639408241805&rft_dat=%3Cproquest_pasca%3E1298091748%3C/proquest_pasca%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1298091748&rft_id=info:pmid/&rfr_iscdi=true |