Theoretical study of the effect of an AlGaAs double heterostructure on metal-semiconductor-metal photodetector performance

The impulse and square-wave input response of different GaAs metal-semiconductor-metal photodetector (MSM) designs are theoretically examined using a two dimensional drift-diffusion numerical calculation with a thermionic-field emission boundary condition model for the heterojunctions. The rise time...

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Veröffentlicht in:	IEEE transactions on electron devices 1994-07, Vol.41 (7), p.1112-1119
Hauptverfasser:	Salem, A.F., Smith, A.W., Brennan, K.F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption Applied sciences Boundary conditions Detectors Electronics Exact sciences and technology Fingers Gallium arsenide Heterojunctions Optoelectronic devices Photodetectors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor process modeling Solid-State Physics Substrates Thermionic emission
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