Josephson junction integrated circuit process with planarized PECVD SiO2 dielectric

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	BARFKNECHT, A. T, RUBY, R. C, KO, H. L, LEE, G. S
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Superconducting devices
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	2203
container_issue	1
container_start_page	2201
container_title
container_volume	3
creator	BARFKNECHT, A. T RUBY, R. C KO, H. L LEE, G. S
description
doi_str_mv	10.1109/77.233940
format	Conference Proceeding
fullrecord	<record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_4068280</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>4068280</sourcerecordid><originalsourceid>FETCH-LOGICAL-p114t-be4ecb40264a3b799280d80603aecf904febd8c96736a8b13224421e74ec5b823</originalsourceid><addsrcrecordid>eNotjF1LwzAYRoMoOKcX_oNceNv55qtNL6XOqQwmTL0dSfrWZdQ2JBmiv96CXj0HHs4h5JrBgjGob6tqwYWoJZyQGVNKF1wxdToxKFZozsU5uUjpAMCklmpGts9jwrBP40APx8FlP4EfMn5Ek7Glzkd39JmGODpMiX75vKehN4OJ_mf6X5bN-z3d-g2nrcceXY7eXZKzzvQJr_53Tt4elq_NY7HerJ6au3URGJO5sCjRWQm8lEbYqq65hlZDCcKg62qQHdpWu7qsRGm0ZYJzKTnDatKU1VzMyc1fN5jkTN9FMzifdiH6TxO_dxJKPSXFL334UUU</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Josephson junction integrated circuit process with planarized PECVD SiO2 dielectric</title><source>IEEE Xplore (Online service)</source><creator>BARFKNECHT, A. T ; RUBY, R. C ; KO, H. L ; LEE, G. S</creator><creatorcontrib>BARFKNECHT, A. T ; RUBY, R. C ; KO, H. L ; LEE, G. S</creatorcontrib><identifier>ISSN: 1051-8223</identifier><identifier>EISSN: 1558-2515</identifier><identifier>DOI: 10.1109/77.233940</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Superconducting devices</subject><ispartof>IEEE transactions on applied superconductivity, 1993, Vol.3 (1), p.2201-2203</ispartof><rights>1994 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,780,784,789,790,23930,23931,25140,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4068280$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>BARFKNECHT, A. T</creatorcontrib><creatorcontrib>RUBY, R. C</creatorcontrib><creatorcontrib>KO, H. L</creatorcontrib><creatorcontrib>LEE, G. S</creatorcontrib><title>Josephson junction integrated circuit process with planarized PECVD SiO2 dielectric</title><title>IEEE transactions on applied superconductivity</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Superconducting devices</subject><issn>1051-8223</issn><issn>1558-2515</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1993</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotjF1LwzAYRoMoOKcX_oNceNv55qtNL6XOqQwmTL0dSfrWZdQ2JBmiv96CXj0HHs4h5JrBgjGob6tqwYWoJZyQGVNKF1wxdToxKFZozsU5uUjpAMCklmpGts9jwrBP40APx8FlP4EfMn5Ek7Glzkd39JmGODpMiX75vKehN4OJ_mf6X5bN-z3d-g2nrcceXY7eXZKzzvQJr_53Tt4elq_NY7HerJ6au3URGJO5sCjRWQm8lEbYqq65hlZDCcKg62qQHdpWu7qsRGm0ZYJzKTnDatKU1VzMyc1fN5jkTN9FMzifdiH6TxO_dxJKPSXFL334UUU</recordid><startdate>19930301</startdate><enddate>19930301</enddate><creator>BARFKNECHT, A. T</creator><creator>RUBY, R. C</creator><creator>KO, H. L</creator><creator>LEE, G. S</creator><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope></search><sort><creationdate>19930301</creationdate><title>Josephson junction integrated circuit process with planarized PECVD SiO2 dielectric</title><author>BARFKNECHT, A. T ; RUBY, R. C ; KO, H. L ; LEE, G. S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p114t-be4ecb40264a3b799280d80603aecf904febd8c96736a8b13224421e74ec5b823</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Superconducting devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>BARFKNECHT, A. T</creatorcontrib><creatorcontrib>RUBY, R. C</creatorcontrib><creatorcontrib>KO, H. L</creatorcontrib><creatorcontrib>LEE, G. S</creatorcontrib><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>BARFKNECHT, A. T</au><au>RUBY, R. C</au><au>KO, H. L</au><au>LEE, G. S</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Josephson junction integrated circuit process with planarized PECVD SiO2 dielectric</atitle><btitle>IEEE transactions on applied superconductivity</btitle><date>1993-03-01</date><risdate>1993</risdate><volume>3</volume><issue>1</issue><spage>2201</spage><epage>2203</epage><pages>2201-2203</pages><issn>1051-8223</issn><eissn>1558-2515</eissn><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1109/77.233940</doi><tpages>3</tpages></addata></record>
fulltext	fulltext
identifier	ISSN: 1051-8223
ispartof	IEEE transactions on applied superconductivity, 1993, Vol.3 (1), p.2201-2203
issn	1051-8223 1558-2515
language	eng
recordid	cdi_pascalfrancis_primary_4068280
source	IEEE Xplore (Online service)
subjects	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Superconducting devices
title	Josephson junction integrated circuit process with planarized PECVD SiO2 dielectric
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T09%3A45%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Josephson%20junction%20integrated%20circuit%20process%20with%20planarized%20PECVD%20SiO2%20dielectric&rft.btitle=IEEE%20transactions%20on%20applied%20superconductivity&rft.au=BARFKNECHT,%20A.%20T&rft.date=1993-03-01&rft.volume=3&rft.issue=1&rft.spage=2201&rft.epage=2203&rft.pages=2201-2203&rft.issn=1051-8223&rft.eissn=1558-2515&rft_id=info:doi/10.1109/77.233940&rft_dat=%3Cpascalfrancis%3E4068280%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true