First direct observation of EL2-like defect levels in annealed LT-GaAs: Low temperature grow GaAs and related materials

Bibliographische Detailangaben

Veröffentlicht in:	Journal of electronic materials 1993, Vol.22 (12), p.1499-1502
Hauptverfasser:	JÄGER, N. D, VERMA, A. K, DRESZER, P, NEWMAN, N, LILIENTAL-WEBER, Z, VAN SCHILFBGAARDE, M, WEBER, E. R
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Electronic transport in condensed matter Exact sciences and technology Iii-v semiconductors Impurity and defect levels Photoconduction and photovoltaic effects Photoconduction and photovoltaic effects photodielectric effects Physics
Online-Zugang:	Volltext
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