An optical study of encapsulant thickness-controlled interdiffusion of asymmetric GaAs quantum well material
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| Veröffentlicht in: | Semiconductor science and technology 1993-10, Vol.8 (10), p.1791-1796 |
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| container_end_page | 1796 |
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| container_issue | 10 |
| container_start_page | 1791 |
| container_title | Semiconductor science and technology |
| container_volume | 8 |
| creator | Ghisoni, M Murray, R Rivers, A W Pate, M Hill, G Woodbridge, K Parry, G |
| description | |
| doi_str_mv | 10.1088/0268-1242/8/10/001 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0268-1242 |
| ispartof | Semiconductor science and technology, 1993-10, Vol.8 (10), p.1791-1796 |
| issn | 0268-1242 1361-6641 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_3847409 |
| source | Institute of Physics Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Chemical interdiffusion diffusion barriers Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Diffusion in solids Exact sciences and technology Iii-v semiconductors Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Transport properties of condensed matter (nonelectronic) |
| title | An optical study of encapsulant thickness-controlled interdiffusion of asymmetric GaAs quantum well material |
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