High-yield W-band monolithic HEMT low-noise amplifier and image rejection downconverter chips

High-yield W-band monolithic microwave integrated circuits (MMICs), namely, a three-stage low-noise amplifier (LNA) and a monolithic image rejection downconverter (IRD), are discussed. The LNA is used as the front end followed by an image rejection mixer (IRM). These MMICs were fabricated in the 0.1...

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Veröffentlicht in:IEEE microwave and guided wave letters 1993-08, Vol.3 (8), p.281-283, Article 281
Hauptverfasser: Wang, H., Chang, K.W., Ton, T.N., Biedenbender, M., Chen, S.T., Lee, J., Dow, G.S., Tan, K.L., Allen, B.R.
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container_end_page 283
container_issue 8
container_start_page 281
container_title IEEE microwave and guided wave letters
container_volume 3
creator Wang, H.
Chang, K.W.
Ton, T.N.
Biedenbender, M.
Chen, S.T.
Lee, J.
Dow, G.S.
Tan, K.L.
Allen, B.R.
description High-yield W-band monolithic microwave integrated circuits (MMICs), namely, a three-stage low-noise amplifier (LNA) and a monolithic image rejection downconverter (IRD), are discussed. The LNA is used as the front end followed by an image rejection mixer (IRM). These MMICs were fabricated in the 0.1- mu m AlGaAs-InGaAs-GaAs HEMT production line. The LNA demonstrated a typical 17-dB gain and 4.5-5.5-dB noise figure at 94 GHz. The complete monolithic IRD has a measured conversion gain of 7-9 dB with a single-side-band noise figure of 6 dB when downconverting a 93-95-GHz RF signal to 50-500 MHz. The downconversion requires an LO power of 9 dBm. The development of these MMICs shows the increasing maturity of GaAs-based HEMT MMIC technology at W-band.< >
doi_str_mv 10.1109/75.242214
format Article
fullrecord <record><control><sourceid>pascalfrancis_RIE</sourceid><recordid>TN_cdi_pascalfrancis_primary_3749791</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>242214</ieee_id><sourcerecordid>3749791</sourcerecordid><originalsourceid>FETCH-LOGICAL-c190t-d0b6c502c6fa9dbd2e4add52d96f4eee5033edef9e1a18df30143aa305adb03</originalsourceid><addsrcrecordid>eNptkM1LAzEQxYMoWKsHr55y8OIhbT423eYopVqh4sGCJ1myyaRN2W6WZLH0v3fLlh7E0wzM7z3ePITuGR0xRtU4lyOecc6yCzRgUk4JF1xddjuVjEw5za_RTUpbSlkmBR2g74Vfb8jBQ2XxFyl1bfEu1KHy7cYbvJi_r3AV9qQOPgHWu6byzkPER87v9BpwhC2Y1oca27CvTah_ILYdYTa-Sbfoyukqwd1pDtHny3w1W5Dlx-vb7HlJDFO0JZaWEyMpNxOnlS0th0xbK7lVE5cBgKRCgAWngGk2tU506YXWgkptSyqG6Kl3NTGkFMEVTezCxUPBaHFspchl0bfSsY892-hkdOWiro1PZ4HIM5Ur1mHjP5bGt_r4Zhu1r_41fugVvgt89jsdfwGLjnq2</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High-yield W-band monolithic HEMT low-noise amplifier and image rejection downconverter chips</title><source>IEEE/IET Electronic Library</source><creator>Wang, H. ; Chang, K.W. ; Ton, T.N. ; Biedenbender, M. ; Chen, S.T. ; Lee, J. ; Dow, G.S. ; Tan, K.L. ; Allen, B.R.</creator><creatorcontrib>Wang, H. ; Chang, K.W. ; Ton, T.N. ; Biedenbender, M. ; Chen, S.T. ; Lee, J. ; Dow, G.S. ; Tan, K.L. ; Allen, B.R.</creatorcontrib><description>High-yield W-band monolithic microwave integrated circuits (MMICs), namely, a three-stage low-noise amplifier (LNA) and a monolithic image rejection downconverter (IRD), are discussed. The LNA is used as the front end followed by an image rejection mixer (IRM). These MMICs were fabricated in the 0.1- mu m AlGaAs-InGaAs-GaAs HEMT production line. The LNA demonstrated a typical 17-dB gain and 4.5-5.5-dB noise figure at 94 GHz. The complete monolithic IRD has a measured conversion gain of 7-9 dB with a single-side-band noise figure of 6 dB when downconverting a 93-95-GHz RF signal to 50-500 MHz. The downconversion requires an LO power of 9 dBm. The development of these MMICs shows the increasing maturity of GaAs-based HEMT MMIC technology at W-band.&lt; &gt;</description><identifier>ISSN: 1051-8207</identifier><identifier>EISSN: 1558-2329</identifier><identifier>DOI: 10.1109/75.242214</identifier><identifier>CODEN: IMGLE3</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Circuit properties ; Electric, optical and optoelectronic circuits ; Electronics ; Exact sciences and technology ; Gain measurement ; HEMTs ; Image converters ; Low-noise amplifiers ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Microwave integrated circuits ; MMICs ; Monolithic integrated circuits ; Noise figure ; Noise measurement ; Production</subject><ispartof>IEEE microwave and guided wave letters, 1993-08, Vol.3 (8), p.281-283, Article 281</ispartof><rights>1994 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c190t-d0b6c502c6fa9dbd2e4add52d96f4eee5033edef9e1a18df30143aa305adb03</citedby><cites>FETCH-LOGICAL-c190t-d0b6c502c6fa9dbd2e4add52d96f4eee5033edef9e1a18df30143aa305adb03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/242214$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/242214$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=3749791$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Wang, H.</creatorcontrib><creatorcontrib>Chang, K.W.</creatorcontrib><creatorcontrib>Ton, T.N.</creatorcontrib><creatorcontrib>Biedenbender, M.</creatorcontrib><creatorcontrib>Chen, S.T.</creatorcontrib><creatorcontrib>Lee, J.</creatorcontrib><creatorcontrib>Dow, G.S.</creatorcontrib><creatorcontrib>Tan, K.L.</creatorcontrib><creatorcontrib>Allen, B.R.</creatorcontrib><title>High-yield W-band monolithic HEMT low-noise amplifier and image rejection downconverter chips</title><title>IEEE microwave and guided wave letters</title><addtitle>MGWL</addtitle><description>High-yield W-band monolithic microwave integrated circuits (MMICs), namely, a three-stage low-noise amplifier (LNA) and a monolithic image rejection downconverter (IRD), are discussed. The LNA is used as the front end followed by an image rejection mixer (IRM). These MMICs were fabricated in the 0.1- mu m AlGaAs-InGaAs-GaAs HEMT production line. The LNA demonstrated a typical 17-dB gain and 4.5-5.5-dB noise figure at 94 GHz. The complete monolithic IRD has a measured conversion gain of 7-9 dB with a single-side-band noise figure of 6 dB when downconverting a 93-95-GHz RF signal to 50-500 MHz. The downconversion requires an LO power of 9 dBm. The development of these MMICs shows the increasing maturity of GaAs-based HEMT MMIC technology at W-band.&lt; &gt;</description><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gain measurement</subject><subject>HEMTs</subject><subject>Image converters</subject><subject>Low-noise amplifiers</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Microwave integrated circuits</subject><subject>MMICs</subject><subject>Monolithic integrated circuits</subject><subject>Noise figure</subject><subject>Noise measurement</subject><subject>Production</subject><issn>1051-8207</issn><issn>1558-2329</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNptkM1LAzEQxYMoWKsHr55y8OIhbT423eYopVqh4sGCJ1myyaRN2W6WZLH0v3fLlh7E0wzM7z3ePITuGR0xRtU4lyOecc6yCzRgUk4JF1xddjuVjEw5za_RTUpbSlkmBR2g74Vfb8jBQ2XxFyl1bfEu1KHy7cYbvJi_r3AV9qQOPgHWu6byzkPER87v9BpwhC2Y1oca27CvTah_ILYdYTa-Sbfoyukqwd1pDtHny3w1W5Dlx-vb7HlJDFO0JZaWEyMpNxOnlS0th0xbK7lVE5cBgKRCgAWngGk2tU506YXWgkptSyqG6Kl3NTGkFMEVTezCxUPBaHFspchl0bfSsY892-hkdOWiro1PZ4HIM5Ur1mHjP5bGt_r4Zhu1r_41fugVvgt89jsdfwGLjnq2</recordid><startdate>199308</startdate><enddate>199308</enddate><creator>Wang, H.</creator><creator>Chang, K.W.</creator><creator>Ton, T.N.</creator><creator>Biedenbender, M.</creator><creator>Chen, S.T.</creator><creator>Lee, J.</creator><creator>Dow, G.S.</creator><creator>Tan, K.L.</creator><creator>Allen, B.R.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>199308</creationdate><title>High-yield W-band monolithic HEMT low-noise amplifier and image rejection downconverter chips</title><author>Wang, H. ; Chang, K.W. ; Ton, T.N. ; Biedenbender, M. ; Chen, S.T. ; Lee, J. ; Dow, G.S. ; Tan, K.L. ; Allen, B.R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c190t-d0b6c502c6fa9dbd2e4add52d96f4eee5033edef9e1a18df30143aa305adb03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gain measurement</topic><topic>HEMTs</topic><topic>Image converters</topic><topic>Low-noise amplifiers</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Microwave integrated circuits</topic><topic>MMICs</topic><topic>Monolithic integrated circuits</topic><topic>Noise figure</topic><topic>Noise measurement</topic><topic>Production</topic><toplevel>online_resources</toplevel><creatorcontrib>Wang, H.</creatorcontrib><creatorcontrib>Chang, K.W.</creatorcontrib><creatorcontrib>Ton, T.N.</creatorcontrib><creatorcontrib>Biedenbender, M.</creatorcontrib><creatorcontrib>Chen, S.T.</creatorcontrib><creatorcontrib>Lee, J.</creatorcontrib><creatorcontrib>Dow, G.S.</creatorcontrib><creatorcontrib>Tan, K.L.</creatorcontrib><creatorcontrib>Allen, B.R.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE microwave and guided wave letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang, H.</au><au>Chang, K.W.</au><au>Ton, T.N.</au><au>Biedenbender, M.</au><au>Chen, S.T.</au><au>Lee, J.</au><au>Dow, G.S.</au><au>Tan, K.L.</au><au>Allen, B.R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-yield W-band monolithic HEMT low-noise amplifier and image rejection downconverter chips</atitle><jtitle>IEEE microwave and guided wave letters</jtitle><stitle>MGWL</stitle><date>1993-08</date><risdate>1993</risdate><volume>3</volume><issue>8</issue><spage>281</spage><epage>283</epage><pages>281-283</pages><artnum>281</artnum><issn>1051-8207</issn><eissn>1558-2329</eissn><coden>IMGLE3</coden><abstract>High-yield W-band monolithic microwave integrated circuits (MMICs), namely, a three-stage low-noise amplifier (LNA) and a monolithic image rejection downconverter (IRD), are discussed. The LNA is used as the front end followed by an image rejection mixer (IRM). These MMICs were fabricated in the 0.1- mu m AlGaAs-InGaAs-GaAs HEMT production line. The LNA demonstrated a typical 17-dB gain and 4.5-5.5-dB noise figure at 94 GHz. The complete monolithic IRD has a measured conversion gain of 7-9 dB with a single-side-band noise figure of 6 dB when downconverting a 93-95-GHz RF signal to 50-500 MHz. The downconversion requires an LO power of 9 dBm. The development of these MMICs shows the increasing maturity of GaAs-based HEMT MMIC technology at W-band.&lt; &gt;</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/75.242214</doi><tpages>3</tpages></addata></record>
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identifier ISSN: 1051-8207
ispartof IEEE microwave and guided wave letters, 1993-08, Vol.3 (8), p.281-283, Article 281
issn 1051-8207
1558-2329
language eng
recordid cdi_pascalfrancis_primary_3749791
source IEEE/IET Electronic Library
subjects Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Gain measurement
HEMTs
Image converters
Low-noise amplifiers
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwave integrated circuits
MMICs
Monolithic integrated circuits
Noise figure
Noise measurement
Production
title High-yield W-band monolithic HEMT low-noise amplifier and image rejection downconverter chips
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T15%3A04%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-yield%20W-band%20monolithic%20HEMT%20low-noise%20amplifier%20and%20image%20rejection%20downconverter%20chips&rft.jtitle=IEEE%20microwave%20and%20guided%20wave%20letters&rft.au=Wang,%20H.&rft.date=1993-08&rft.volume=3&rft.issue=8&rft.spage=281&rft.epage=283&rft.pages=281-283&rft.artnum=281&rft.issn=1051-8207&rft.eissn=1558-2329&rft.coden=IMGLE3&rft_id=info:doi/10.1109/75.242214&rft_dat=%3Cpascalfrancis_RIE%3E3749791%3C/pascalfrancis_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=242214&rfr_iscdi=true