Analysis of ultrafast photocarrier transport in AlInAs-GaInAs heterojunction bipolar transistors

We present a detailed physical analysis of photocarrier transport in heterojunction bipolar transistors (HBT's) which describes their optical impulse responses on picosecond time scales. Theoretical predictions are experimentally verified with AlInAs-GaInAs HBT's using femtosecond visible-...

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Veröffentlicht in:	IEEE journal of quantum electronics 1995-02, Vol.31 (2), p.278-285
Hauptverfasser:	Frankel, M.Y., Carruthers, T.F., Kyono, C.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Accuracy Applied sciences Bandwidth Electric variables measurement Electronics Exact sciences and technology Heterojunction bipolar transistors Optical devices Optical pulses Optoelectronic devices Pulse measurements Sampling methods Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Time measurement Ultrafast optics
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