The influence of ion implantation conditions on defect formation and amorphisation in silicon
A phenomenological model describing the dependence of deformation processes on ion implantation conditions is proposed. Experimental results of defect formation as well as amorphisation in silicone for the implantation with Ne + , Ar + and Kr + ions in the temperature interval of 150-500 K and for i...
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| Veröffentlicht in: | Radiation effects and defects in solids 1994-09, Vol.132 (1), p.11-18 |
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| container_title | Radiation effects and defects in solids |
| container_volume | 132 |
| creator | Zukovski, P. V. Kiszczak, K. Maczka, D. Latuszynski, A. |
| description | A phenomenological model describing the dependence of deformation processes on ion implantation conditions is proposed. Experimental results of defect formation as well as amorphisation in silicone for the implantation with Ne
+
, Ar
+
and Kr
+
ions in the temperature interval of 150-500 K and for ion current densities of 0.5 to 4.0 μA/cm
2
are presented. An analysis of the experimental data within the framework of the proposed model has been carried out. The basic characteristics of the defects appearing at silicon amorphisation also have been defined. |
| doi_str_mv | 10.1080/10420159408219251 |
| format | Article |
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+
, Ar
+
and Kr
+
ions in the temperature interval of 150-500 K and for ion current densities of 0.5 to 4.0 μA/cm
2
are presented. An analysis of the experimental data within the framework of the proposed model has been carried out. The basic characteristics of the defects appearing at silicon amorphisation also have been defined.</description><identifier>ISSN: 1042-0150</identifier><identifier>EISSN: 1029-4953</identifier><identifier>DOI: 10.1080/10420159408219251</identifier><identifier>CODEN: REDSEI</identifier><language>eng</language><publisher>Reading: Taylor & Francis Group</publisher><subject>amorphization ; bombardment ; Condensed matter: structure, mechanical and thermal properties ; defect formation ; Defects and impurities in crystals; microstructure ; Doping and impurity implantation in germanium and silicon ; Exact sciences and technology ; Ion implantation ; Physics ; Structure of solids and liquids; crystallography ; temperature dependence</subject><ispartof>Radiation effects and defects in solids, 1994-09, Vol.132 (1), p.11-18</ispartof><rights>Copyright Taylor & Francis Group, LLC 1994</rights><rights>1995 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c240t-f9bddb2129b063d92f702ab778ef57123cf6a5bab7420e96dce9113536ca70893</citedby><cites>FETCH-LOGICAL-c240t-f9bddb2129b063d92f702ab778ef57123cf6a5bab7420e96dce9113536ca70893</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.tandfonline.com/doi/pdf/10.1080/10420159408219251$$EPDF$$P50$$Ginformaworld$$H</linktopdf><linktohtml>$$Uhttps://www.tandfonline.com/doi/full/10.1080/10420159408219251$$EHTML$$P50$$Ginformaworld$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,59647,60436</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3674259$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Zukovski, P. V.</creatorcontrib><creatorcontrib>Kiszczak, K.</creatorcontrib><creatorcontrib>Maczka, D.</creatorcontrib><creatorcontrib>Latuszynski, A.</creatorcontrib><title>The influence of ion implantation conditions on defect formation and amorphisation in silicon</title><title>Radiation effects and defects in solids</title><description>A phenomenological model describing the dependence of deformation processes on ion implantation conditions is proposed. Experimental results of defect formation as well as amorphisation in silicone for the implantation with Ne
+
, Ar
+
and Kr
+
ions in the temperature interval of 150-500 K and for ion current densities of 0.5 to 4.0 μA/cm
2
are presented. An analysis of the experimental data within the framework of the proposed model has been carried out. The basic characteristics of the defects appearing at silicon amorphisation also have been defined.</description><subject>amorphization</subject><subject>bombardment</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>defect formation</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Doping and impurity implantation in germanium and silicon</subject><subject>Exact sciences and technology</subject><subject>Ion implantation</subject><subject>Physics</subject><subject>Structure of solids and liquids; crystallography</subject><subject>temperature dependence</subject><issn>1042-0150</issn><issn>1029-4953</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNp1kMtKxDAUhoMoOI4-gLss3FZPLr0E3MjgDQbcjEspaS5MpE1KUpF5e1OqbsTVuX7_4fwIXRK4JtDADQFOgZSCQ0OJoCU5QisCVBRclOx4zjkt8gKcorOU3gGg4Q1fobfd3mDnbf9hvDI4WOyCx24Ye-knOc2FCl67OUs4V9pYoyZsQxyWsfQayyHEce_S0nEeJ9e7zJ2jEyv7ZC6-4xq9PtzvNk_F9uXxeXO3LRTlMBVWdFp3lFDRQcW0oLYGKru6bowta0KZspUsu9zJTxpRaWUEIaxklZI1NIKtEVl0VQwpRWPbMbpBxkNLoJ39af_4k5mrhRllUrK3UXrl0i_IqnysnKVvl7Vs0vzzZ4i9bid56EP8Ydj_V74ADxR4vQ</recordid><startdate>19940901</startdate><enddate>19940901</enddate><creator>Zukovski, P. V.</creator><creator>Kiszczak, K.</creator><creator>Maczka, D.</creator><creator>Latuszynski, A.</creator><general>Taylor & Francis Group</general><general>Taylor and Francis</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19940901</creationdate><title>The influence of ion implantation conditions on defect formation and amorphisation in silicon</title><author>Zukovski, P. V. ; Kiszczak, K. ; Maczka, D. ; Latuszynski, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c240t-f9bddb2129b063d92f702ab778ef57123cf6a5bab7420e96dce9113536ca70893</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>amorphization</topic><topic>bombardment</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>defect formation</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Doping and impurity implantation in germanium and silicon</topic><topic>Exact sciences and technology</topic><topic>Ion implantation</topic><topic>Physics</topic><topic>Structure of solids and liquids; crystallography</topic><topic>temperature dependence</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zukovski, P. V.</creatorcontrib><creatorcontrib>Kiszczak, K.</creatorcontrib><creatorcontrib>Maczka, D.</creatorcontrib><creatorcontrib>Latuszynski, A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Radiation effects and defects in solids</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zukovski, P. V.</au><au>Kiszczak, K.</au><au>Maczka, D.</au><au>Latuszynski, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The influence of ion implantation conditions on defect formation and amorphisation in silicon</atitle><jtitle>Radiation effects and defects in solids</jtitle><date>1994-09-01</date><risdate>1994</risdate><volume>132</volume><issue>1</issue><spage>11</spage><epage>18</epage><pages>11-18</pages><issn>1042-0150</issn><eissn>1029-4953</eissn><coden>REDSEI</coden><abstract>A phenomenological model describing the dependence of deformation processes on ion implantation conditions is proposed. Experimental results of defect formation as well as amorphisation in silicone for the implantation with Ne
+
, Ar
+
and Kr
+
ions in the temperature interval of 150-500 K and for ion current densities of 0.5 to 4.0 μA/cm
2
are presented. An analysis of the experimental data within the framework of the proposed model has been carried out. The basic characteristics of the defects appearing at silicon amorphisation also have been defined.</abstract><cop>Reading</cop><pub>Taylor & Francis Group</pub><doi>10.1080/10420159408219251</doi><tpages>8</tpages></addata></record> |
| fulltext | fulltext |
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| ispartof | Radiation effects and defects in solids, 1994-09, Vol.132 (1), p.11-18 |
| issn | 1042-0150 1029-4953 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_3674259 |
| source | Taylor & Francis:Master (3349 titles) |
| subjects | amorphization bombardment Condensed matter: structure, mechanical and thermal properties defect formation Defects and impurities in crystals microstructure Doping and impurity implantation in germanium and silicon Exact sciences and technology Ion implantation Physics Structure of solids and liquids crystallography temperature dependence |
| title | The influence of ion implantation conditions on defect formation and amorphisation in silicon |
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