Interace effects on double injection current and photocurrent in aSi:H n-i-p and p-i-n diodes: Electronic processes in hydrogenated amorphous silicon

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Veröffentlicht in:Journal of non-crystalline solids 1995, Vol.190 (1-2), p.95-106
Hauptverfasser: VANDERHAGEN, R, DAXING HAN
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creator VANDERHAGEN, R
DAXING HAN
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1873-4812
language eng
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source Elsevier ScienceDirect Journals
subjects Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Diodes
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Electronic transport phenomena in thin films and low-dimensional structures
Electronics
Exact sciences and technology
Junction diodes
Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
Photoconduction and photovoltaic effects
Photoconduction and photovoltaic effects
photodielectric effects
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Interace effects on double injection current and photocurrent in aSi:H n-i-p and p-i-n diodes: Electronic processes in hydrogenated amorphous silicon
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