The role of the plasma in the chemistry of low pressure plasma etchers
A new procedure for the calculation of neutral transport at long mean free paths is applied to describing plasma chemistry in a low neutral pressure high plasma density plasma reactor. The method is based on a novel "propagator" technique. The calculation of propagators to allow for variou...
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| Veröffentlicht in: | IEEE Transactions on Plasma Science 1995-06, Vol.23 (3), p.436-452 |
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| container_title | IEEE Transactions on Plasma Science |
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| creator | Harvey, R.E.P. Hitchon, W.N.G. Parker, G.J. |
| description | A new procedure for the calculation of neutral transport at long mean free paths is applied to describing plasma chemistry in a low neutral pressure high plasma density plasma reactor. The method is based on a novel "propagator" technique. The calculation of propagators to allow for various effects such as variable mean free path and anisotropic scattering is demonstrated. The role of the plasma in determining the neutral species behavior is investigated in some detail. The transport to the walls and the recycling of ions and hot neutrals are examined and shown to strongly affect the chemistry. The effects of truncating the hot tail of the electron distribution function and altering the spatial distribution of hot electrons are also calculated, and are shown for the most part to be relatively small provided the power deposition is held constant. The values of sticking coefficients for neutral radicals are shown to have a significant effect. The model results match experimental trends for CF/sub 4/ and CF/sub 3/ densities as functions of power, pressure and inlet how rate variation.< > |
| doi_str_mv | 10.1109/27.402338 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_pascalfrancis_primary_3649858</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>402338</ieee_id><sourcerecordid>28609728</sourcerecordid><originalsourceid>FETCH-LOGICAL-c359t-a0115a3c4f64b2a495f7bba366569018ca5495cef0a420ca5abd1c5cee455f863</originalsourceid><addsrcrecordid>eNpdkM9LwzAUx4MoOKcHr56qiOChMz-aNDnKcCoMvMxzSOMr6-iamqTI_nszO3bw9H593pf3vghdEzwjBKsnWs4KTBmTJ2hCFFO5YiU_RROMFcuZJOwcXYSwwZgUHNMJWqzWkHnXQubqLKa8b03Ymqzp_iq7hm0Tot_tx637yXoPIQz-yEFMiA-X6Kw2bYCrQ5yiz8XLav6WLz9e3-fPy9wyrmJuMCHcMFvUoqioKRSvy6oyTAguFCbSGp56FmpsCopTZaovYlMDCs5rKdgU3Y66LsRGB9tEsGvrug5s1IRIJVhiHkam9-57gBB1esFC25oO3BA0lQKrksoE3v0DN27wXbpfE8WJ4CT5NUWPI2S9C8FDrXvfbI3faYL13nJNSz1antj7g6AJ1rS1N51twnGBiUJJvsduRqwBgOP0oPEL0EWGfA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>195165181</pqid></control><display><type>article</type><title>The role of the plasma in the chemistry of low pressure plasma etchers</title><source>IEEE Electronic Library (IEL)</source><creator>Harvey, R.E.P. ; Hitchon, W.N.G. ; Parker, G.J.</creator><creatorcontrib>Harvey, R.E.P. ; Hitchon, W.N.G. ; Parker, G.J.</creatorcontrib><description>A new procedure for the calculation of neutral transport at long mean free paths is applied to describing plasma chemistry in a low neutral pressure high plasma density plasma reactor. The method is based on a novel "propagator" technique. The calculation of propagators to allow for various effects such as variable mean free path and anisotropic scattering is demonstrated. The role of the plasma in determining the neutral species behavior is investigated in some detail. The transport to the walls and the recycling of ions and hot neutrals are examined and shown to strongly affect the chemistry. The effects of truncating the hot tail of the electron distribution function and altering the spatial distribution of hot electrons are also calculated, and are shown for the most part to be relatively small provided the power deposition is held constant. The values of sticking coefficients for neutral radicals are shown to have a significant effect. The model results match experimental trends for CF/sub 4/ and CF/sub 3/ densities as functions of power, pressure and inlet how rate variation.< ></description><identifier>ISSN: 0093-3813</identifier><identifier>EISSN: 1939-9375</identifier><identifier>DOI: 10.1109/27.402338</identifier><identifier>CODEN: ITPSBD</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Anisotropic magnetoresistance ; CARBON FLUORIDES ; CHEMICAL REACTORS ; Chemistry ; Cross-disciplinary physics: materials science; rheology ; Distribution functions ; Electrons ; ETCHING ; Exact sciences and technology ; Gases ; Inductors ; Instruments ; MATERIALS SCIENCE ; NEUTRAL-PARTICLE TRANSPORT ; Physics ; Physics of gases, plasmas and electric discharges ; Physics of plasmas and electric discharges ; Plasma applications ; Plasma chemistry ; Plasma density ; Plasma production and heating ; PLASMA SIMULATION ; Plasma sources ; Plasma transport processes ; Probability distribution ; Recycling ; Scattering ; SILICON ; Surface treatments</subject><ispartof>IEEE Transactions on Plasma Science, 1995-06, Vol.23 (3), p.436-452</ispartof><rights>1995 INIST-CNRS</rights><rights>Copyright Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jun 1995</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-a0115a3c4f64b2a495f7bba366569018ca5495cef0a420ca5abd1c5cee455f863</citedby><cites>FETCH-LOGICAL-c359t-a0115a3c4f64b2a495f7bba366569018ca5495cef0a420ca5abd1c5cee455f863</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/402338$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,885,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/402338$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3649858$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/118963$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Harvey, R.E.P.</creatorcontrib><creatorcontrib>Hitchon, W.N.G.</creatorcontrib><creatorcontrib>Parker, G.J.</creatorcontrib><title>The role of the plasma in the chemistry of low pressure plasma etchers</title><title>IEEE Transactions on Plasma Science</title><addtitle>TPS</addtitle><description>A new procedure for the calculation of neutral transport at long mean free paths is applied to describing plasma chemistry in a low neutral pressure high plasma density plasma reactor. The method is based on a novel "propagator" technique. The calculation of propagators to allow for various effects such as variable mean free path and anisotropic scattering is demonstrated. The role of the plasma in determining the neutral species behavior is investigated in some detail. The transport to the walls and the recycling of ions and hot neutrals are examined and shown to strongly affect the chemistry. The effects of truncating the hot tail of the electron distribution function and altering the spatial distribution of hot electrons are also calculated, and are shown for the most part to be relatively small provided the power deposition is held constant. The values of sticking coefficients for neutral radicals are shown to have a significant effect. The model results match experimental trends for CF/sub 4/ and CF/sub 3/ densities as functions of power, pressure and inlet how rate variation.< ></description><subject>Anisotropic magnetoresistance</subject><subject>CARBON FLUORIDES</subject><subject>CHEMICAL REACTORS</subject><subject>Chemistry</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Distribution functions</subject><subject>Electrons</subject><subject>ETCHING</subject><subject>Exact sciences and technology</subject><subject>Gases</subject><subject>Inductors</subject><subject>Instruments</subject><subject>MATERIALS SCIENCE</subject><subject>NEUTRAL-PARTICLE TRANSPORT</subject><subject>Physics</subject><subject>Physics of gases, plasmas and electric discharges</subject><subject>Physics of plasmas and electric discharges</subject><subject>Plasma applications</subject><subject>Plasma chemistry</subject><subject>Plasma density</subject><subject>Plasma production and heating</subject><subject>PLASMA SIMULATION</subject><subject>Plasma sources</subject><subject>Plasma transport processes</subject><subject>Probability distribution</subject><subject>Recycling</subject><subject>Scattering</subject><subject>SILICON</subject><subject>Surface treatments</subject><issn>0093-3813</issn><issn>1939-9375</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNpdkM9LwzAUx4MoOKcHr56qiOChMz-aNDnKcCoMvMxzSOMr6-iamqTI_nszO3bw9H593pf3vghdEzwjBKsnWs4KTBmTJ2hCFFO5YiU_RROMFcuZJOwcXYSwwZgUHNMJWqzWkHnXQubqLKa8b03Ymqzp_iq7hm0Tot_tx637yXoPIQz-yEFMiA-X6Kw2bYCrQ5yiz8XLav6WLz9e3-fPy9wyrmJuMCHcMFvUoqioKRSvy6oyTAguFCbSGp56FmpsCopTZaovYlMDCs5rKdgU3Y66LsRGB9tEsGvrug5s1IRIJVhiHkam9-57gBB1esFC25oO3BA0lQKrksoE3v0DN27wXbpfE8WJ4CT5NUWPI2S9C8FDrXvfbI3faYL13nJNSz1antj7g6AJ1rS1N51twnGBiUJJvsduRqwBgOP0oPEL0EWGfA</recordid><startdate>19950601</startdate><enddate>19950601</enddate><creator>Harvey, R.E.P.</creator><creator>Hitchon, W.N.G.</creator><creator>Parker, G.J.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19950601</creationdate><title>The role of the plasma in the chemistry of low pressure plasma etchers</title><author>Harvey, R.E.P. ; Hitchon, W.N.G. ; Parker, G.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-a0115a3c4f64b2a495f7bba366569018ca5495cef0a420ca5abd1c5cee455f863</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Anisotropic magnetoresistance</topic><topic>CARBON FLUORIDES</topic><topic>CHEMICAL REACTORS</topic><topic>Chemistry</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Distribution functions</topic><topic>Electrons</topic><topic>ETCHING</topic><topic>Exact sciences and technology</topic><topic>Gases</topic><topic>Inductors</topic><topic>Instruments</topic><topic>MATERIALS SCIENCE</topic><topic>NEUTRAL-PARTICLE TRANSPORT</topic><topic>Physics</topic><topic>Physics of gases, plasmas and electric discharges</topic><topic>Physics of plasmas and electric discharges</topic><topic>Plasma applications</topic><topic>Plasma chemistry</topic><topic>Plasma density</topic><topic>Plasma production and heating</topic><topic>PLASMA SIMULATION</topic><topic>Plasma sources</topic><topic>Plasma transport processes</topic><topic>Probability distribution</topic><topic>Recycling</topic><topic>Scattering</topic><topic>SILICON</topic><topic>Surface treatments</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Harvey, R.E.P.</creatorcontrib><creatorcontrib>Hitchon, W.N.G.</creatorcontrib><creatorcontrib>Parker, G.J.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>IEEE Transactions on Plasma Science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Harvey, R.E.P.</au><au>Hitchon, W.N.G.</au><au>Parker, G.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The role of the plasma in the chemistry of low pressure plasma etchers</atitle><jtitle>IEEE Transactions on Plasma Science</jtitle><stitle>TPS</stitle><date>1995-06-01</date><risdate>1995</risdate><volume>23</volume><issue>3</issue><spage>436</spage><epage>452</epage><pages>436-452</pages><issn>0093-3813</issn><eissn>1939-9375</eissn><coden>ITPSBD</coden><abstract>A new procedure for the calculation of neutral transport at long mean free paths is applied to describing plasma chemistry in a low neutral pressure high plasma density plasma reactor. The method is based on a novel "propagator" technique. The calculation of propagators to allow for various effects such as variable mean free path and anisotropic scattering is demonstrated. The role of the plasma in determining the neutral species behavior is investigated in some detail. The transport to the walls and the recycling of ions and hot neutrals are examined and shown to strongly affect the chemistry. The effects of truncating the hot tail of the electron distribution function and altering the spatial distribution of hot electrons are also calculated, and are shown for the most part to be relatively small provided the power deposition is held constant. The values of sticking coefficients for neutral radicals are shown to have a significant effect. The model results match experimental trends for CF/sub 4/ and CF/sub 3/ densities as functions of power, pressure and inlet how rate variation.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/27.402338</doi><tpages>17</tpages></addata></record> |
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| identifier | ISSN: 0093-3813 |
| ispartof | IEEE Transactions on Plasma Science, 1995-06, Vol.23 (3), p.436-452 |
| issn | 0093-3813 1939-9375 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Anisotropic magnetoresistance CARBON FLUORIDES CHEMICAL REACTORS Chemistry Cross-disciplinary physics: materials science rheology Distribution functions Electrons ETCHING Exact sciences and technology Gases Inductors Instruments MATERIALS SCIENCE NEUTRAL-PARTICLE TRANSPORT Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Plasma applications Plasma chemistry Plasma density Plasma production and heating PLASMA SIMULATION Plasma sources Plasma transport processes Probability distribution Recycling Scattering SILICON Surface treatments |
| title | The role of the plasma in the chemistry of low pressure plasma etchers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T02%3A32%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20role%20of%20the%20plasma%20in%20the%20chemistry%20of%20low%20pressure%20plasma%20etchers&rft.jtitle=IEEE%20Transactions%20on%20Plasma%20Science&rft.au=Harvey,%20R.E.P.&rft.date=1995-06-01&rft.volume=23&rft.issue=3&rft.spage=436&rft.epage=452&rft.pages=436-452&rft.issn=0093-3813&rft.eissn=1939-9375&rft.coden=ITPSBD&rft_id=info:doi/10.1109/27.402338&rft_dat=%3Cproquest_RIE%3E28609728%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=195165181&rft_id=info:pmid/&rft_ieee_id=402338&rfr_iscdi=true |