In situ intercalation of the layered compounds TiS2, ZrSe2 and VSe2

We report photoelectron spectroscopy studies of the valence band structure of the layered compounds TiS2, ZrSe2, and VSe2, and of changes induced by in situ intercalation with Cs. The pure compounds crystallize with the same structure, the 1T-CdI2 structure, but their electronic properties are diffe...

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Veröffentlicht in:Surface science 1995-07, Vol.331-333, p.419-424
Hauptverfasser: Brauer, H.E., Starnberg, H.I., Holleboom, L.J., Hughes, H.P.
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Starnberg, H.I.
Holleboom, L.J.
Hughes, H.P.
description We report photoelectron spectroscopy studies of the valence band structure of the layered compounds TiS2, ZrSe2, and VSe2, and of changes induced by in situ intercalation with Cs. The pure compounds crystallize with the same structure, the 1T-CdI2 structure, but their electronic properties are different; TiS2 is a narrow-gap semiconductor (Eg ∼ 0.2 eV), ZrSe2 is a semiconductor (Eg ∼ 1 eV) and VSe2 is a semimetal. Despite their different electronic properties, the results show that the character of their valence bands changes from 3D to 2D upon intercalation with Cs. The observed changes, supported by LAPW band calculations, go far beyond the rigid band model.
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subjects Angle resolved photoemission
Compound formation
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron and ion emission by liquids and solids
impact phenomena
Electron density of states and band structure of crystalline solids
Electron states
Exact sciences and technology
Low index single crystal surfaces
Photoemission and photoelectron spectra
Physics
Surface electronic phenomena
Transition metal dichalcogenides
title In situ intercalation of the layered compounds TiS2, ZrSe2 and VSe2
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