High-power semiconductor edge-emitting light-emitting diodes for optical low coherence reflectometry
A new semiconductor source was designed for optical low coherence reflectometry, increasing the sidelobe-free dynamic range by three to five orders of magnitude compared to conventional EELED's. Reflectivities internal to an optical fiber circuit separated by as much as eight orders of magnitud...
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| Veröffentlicht in: | IEEE journal of quantum electronics 1995-08, Vol.31 (8), p.1494-1503 |
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| container_end_page | 1503 |
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| container_issue | 8 |
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| container_title | IEEE journal of quantum electronics |
| container_volume | 31 |
| creator | Fouquet, J.E. Trott, G.R. Sorin, W.V. Ludowise, M.J. Braun, D.M. |
| description | A new semiconductor source was designed for optical low coherence reflectometry, increasing the sidelobe-free dynamic range by three to five orders of magnitude compared to conventional EELED's. Reflectivities internal to an optical fiber circuit separated by as much as eight orders of magnitude can now be detected at wavelengths of 1.3 and 1.55 /spl mu/m, using compact semiconductor sources. For applications not requiring sidelobe-free operation, the same devices can be operated at high current (200 mA) and low temperatures (near 0/spl deg/C) to produce nearly 1 mW of 1.5 /spl mu/m emission coupled into single-mode fiber. The resulting wavelength spectrum is smooth, enabling fiber-based absorption spectral measurements.< > |
| doi_str_mv | 10.1109/3.400402 |
| format | Article |
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Reflectivities internal to an optical fiber circuit separated by as much as eight orders of magnitude can now be detected at wavelengths of 1.3 and 1.55 /spl mu/m, using compact semiconductor sources. For applications not requiring sidelobe-free operation, the same devices can be operated at high current (200 mA) and low temperatures (near 0/spl deg/C) to produce nearly 1 mW of 1.5 /spl mu/m emission coupled into single-mode fiber. The resulting wavelength spectrum is smooth, enabling fiber-based absorption spectral measurements.< ></description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/3.400402</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Circuits ; Coherence ; Dynamic range ; Electronics ; Exact sciences and technology ; Light emitting diodes ; Optical design ; Optical fiber devices ; Optical fibers ; Optoelectronic devices ; Reflectivity ; Reflectometry ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Reflectivities internal to an optical fiber circuit separated by as much as eight orders of magnitude can now be detected at wavelengths of 1.3 and 1.55 /spl mu/m, using compact semiconductor sources. For applications not requiring sidelobe-free operation, the same devices can be operated at high current (200 mA) and low temperatures (near 0/spl deg/C) to produce nearly 1 mW of 1.5 /spl mu/m emission coupled into single-mode fiber. The resulting wavelength spectrum is smooth, enabling fiber-based absorption spectral measurements.< ></description><subject>Applied sciences</subject><subject>Circuits</subject><subject>Coherence</subject><subject>Dynamic range</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Light emitting diodes</subject><subject>Optical design</subject><subject>Optical fiber devices</subject><subject>Optical fibers</subject><subject>Optoelectronic devices</subject><subject>Reflectivity</subject><subject>Reflectometry</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fouquet, J.E.</creatorcontrib><creatorcontrib>Trott, G.R.</creatorcontrib><creatorcontrib>Sorin, W.V.</creatorcontrib><creatorcontrib>Ludowise, M.J.</creatorcontrib><creatorcontrib>Braun, D.M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fouquet, J.E.</au><au>Trott, G.R.</au><au>Sorin, W.V.</au><au>Ludowise, M.J.</au><au>Braun, D.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-power semiconductor edge-emitting light-emitting diodes for optical low coherence reflectometry</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>1995-08-01</date><risdate>1995</risdate><volume>31</volume><issue>8</issue><spage>1494</spage><epage>1503</epage><pages>1494-1503</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>A new semiconductor source was designed for optical low coherence reflectometry, increasing the sidelobe-free dynamic range by three to five orders of magnitude compared to conventional EELED's. Reflectivities internal to an optical fiber circuit separated by as much as eight orders of magnitude can now be detected at wavelengths of 1.3 and 1.55 /spl mu/m, using compact semiconductor sources. For applications not requiring sidelobe-free operation, the same devices can be operated at high current (200 mA) and low temperatures (near 0/spl deg/C) to produce nearly 1 mW of 1.5 /spl mu/m emission coupled into single-mode fiber. The resulting wavelength spectrum is smooth, enabling fiber-based absorption spectral measurements.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/3.400402</doi><tpages>10</tpages></addata></record> |
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| identifier | ISSN: 0018-9197 |
| ispartof | IEEE journal of quantum electronics, 1995-08, Vol.31 (8), p.1494-1503 |
| issn | 0018-9197 1558-1713 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_3613122 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Circuits Coherence Dynamic range Electronics Exact sciences and technology Light emitting diodes Optical design Optical fiber devices Optical fibers Optoelectronic devices Reflectivity Reflectometry Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature |
| title | High-power semiconductor edge-emitting light-emitting diodes for optical low coherence reflectometry |
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