Temperature and pressure dependence of Ge diffusion in aluminium

Results on the temperature and pressure dependence of Ge diffusion in pure aluminium are reported. Radiotracer methods in combination with serial sectioning by microtome are employed in our experiments. Oxide hold‐up effects are avoided either by ion implantation of 71Ge or by sputtercleaning of the...

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Veröffentlicht in:	Physica status solidi. A, Applied research Applied research, 1995-06, Vol.149 (2), p.535-547
Hauptverfasser:	Thürer, A., Rummel, G., Zumkley, Th, Freitag, K., Mehrer, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed matter: structure, mechanical and thermal properties Diffusion in solids Diffusion of impurities Exact sciences and technology Metals. Metallurgy Physics Transport properties of condensed matter (nonelectronic)
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