Ion beam shadowing effect in submicromometer large-angle-tilt implanted drain (latid) MOSFETs

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Veröffentlicht in:	Solid-state electronics 1995, Vol.38 (7), p.1321-1323
Hauptverfasser:	HUNG-SHENG CHEN, CHIH-SIEH TENG, MOBERLY, L, LAHRI, R
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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ispartof	Solid-state electronics, 1995, Vol.38 (7), p.1321-1323
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source	Elsevier ScienceDirect Journals
subjects	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
title	Ion beam shadowing effect in submicromometer large-angle-tilt implanted drain (latid) MOSFETs
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