Effects of electrical stress parameters on polarization loss in ferroelectric P(L)ZT thin film capacitors
The effects of stress parameters (e,g,, stress magnitude, frequency, and pulse shape) on the loss of DRAM polarization during unipolar pulse stressing in sol-gel P(L)ZT thin film capacitors have been studied. The results indicate that there is a strong correlation between the fatigue rate and the DR...
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| Veröffentlicht in: | IEEE electron device letters 1995-04, Vol.16 (4), p.130-132 |
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| container_title | IEEE electron device letters |
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| creator | Khamankar, R.B. Jiyoung Kim Sudhama, C. Bo Jiang Lee, J.C. |
| description | The effects of stress parameters (e,g,, stress magnitude, frequency, and pulse shape) on the loss of DRAM polarization during unipolar pulse stressing in sol-gel P(L)ZT thin film capacitors have been studied. The results indicate that there is a strong correlation between the fatigue rate and the DRAM polarization for the fresh device. It has been found that contrary to what one might expect, the fatigue rate does not increase indefinitely with increasing stress voltage but saturates at the same voltage at which the polarization-voltage loop saturates. Though the effect of the rise time of the stress pulses on the fatigue rate is negligible, the fatigue rate is strongly dependent on the pulse width of the trapezoidal stress pulses.< > |
| doi_str_mv | 10.1109/55.372491 |
| format | Article |
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The results indicate that there is a strong correlation between the fatigue rate and the DRAM polarization for the fresh device. It has been found that contrary to what one might expect, the fatigue rate does not increase indefinitely with increasing stress voltage but saturates at the same voltage at which the polarization-voltage loop saturates. Though the effect of the rise time of the stress pulses on the fatigue rate is negligible, the fatigue rate is strongly dependent on the pulse width of the trapezoidal stress pulses.< ></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.372491</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Electronic equipment and fabrication. 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The results indicate that there is a strong correlation between the fatigue rate and the DRAM polarization for the fresh device. It has been found that contrary to what one might expect, the fatigue rate does not increase indefinitely with increasing stress voltage but saturates at the same voltage at which the polarization-voltage loop saturates. Though the effect of the rise time of the stress pulses on the fatigue rate is negligible, the fatigue rate is strongly dependent on the pulse width of the trapezoidal stress pulses.< ></description><subject>Applied sciences</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fatigue</subject><subject>Frequency</subject><subject>Polarization</subject><subject>Pulse shaping methods</subject><subject>Random access memory</subject><subject>Shape</subject><subject>Space vector pulse width modulation</subject><subject>Stress</subject><subject>Transistors</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNpFkDtPwzAUhS0EEqUwsDJ5QIgOKXbiRzyiqjykSjCUhSVynGth5DywwwC_HlcpMN17db5zpHsQOqdkSSlRN5wvC5kzRQ_QjHJeZoSL4hDNiGQ0KygRx-gkxndCKGOSzZBbWwtmjLi3GHzagjPa4zgGiBEPOugWRghJ7_DQex3ctx5dOnyfdNdhCyH0v078fL1ZvG7x-LZTnG-x0YM2buxDPEVHVvsIZ_s5Ry936-3qIds83T-ubjeZKYgYMyiaummMVAXLKZeEatoIo0A0NRM1l9pyRikAl6asLU8ot8rWmimhlDakmKOrKXcI_ccnxLFqXTTgve6g_4xVXuaCyFImcDGBJqRfAthqCK7V4auipNqVWXFeTWUm9nIfqmPqxwbdGRf_DAWTJRO7yIsJcwDwr04ZP5N1fbE</recordid><startdate>19950401</startdate><enddate>19950401</enddate><creator>Khamankar, R.B.</creator><creator>Jiyoung Kim</creator><creator>Sudhama, C.</creator><creator>Bo Jiang</creator><creator>Lee, J.C.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19950401</creationdate><title>Effects of electrical stress parameters on polarization loss in ferroelectric P(L)ZT thin film capacitors</title><author>Khamankar, R.B. ; Jiyoung Kim ; Sudhama, C. ; Bo Jiang ; Lee, J.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c306t-e3dbddc7934215701a1d6c9e6db46b57af5411ee57c8bf5ddc5f9fba49699ac03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Applied sciences</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fatigue</topic><topic>Frequency</topic><topic>Polarization</topic><topic>Pulse shaping methods</topic><topic>Random access memory</topic><topic>Shape</topic><topic>Space vector pulse width modulation</topic><topic>Stress</topic><topic>Transistors</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Khamankar, R.B.</creatorcontrib><creatorcontrib>Jiyoung Kim</creatorcontrib><creatorcontrib>Sudhama, C.</creatorcontrib><creatorcontrib>Bo Jiang</creatorcontrib><creatorcontrib>Lee, J.C.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Khamankar, R.B.</au><au>Jiyoung Kim</au><au>Sudhama, C.</au><au>Bo Jiang</au><au>Lee, J.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of electrical stress parameters on polarization loss in ferroelectric P(L)ZT thin film capacitors</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1995-04-01</date><risdate>1995</risdate><volume>16</volume><issue>4</issue><spage>130</spage><epage>132</epage><pages>130-132</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>The effects of stress parameters (e,g,, stress magnitude, frequency, and pulse shape) on the loss of DRAM polarization during unipolar pulse stressing in sol-gel P(L)ZT thin film capacitors have been studied. The results indicate that there is a strong correlation between the fatigue rate and the DRAM polarization for the fresh device. It has been found that contrary to what one might expect, the fatigue rate does not increase indefinitely with increasing stress voltage but saturates at the same voltage at which the polarization-voltage loop saturates. Though the effect of the rise time of the stress pulses on the fatigue rate is negligible, the fatigue rate is strongly dependent on the pulse width of the trapezoidal stress pulses.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/55.372491</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE electron device letters, 1995-04, Vol.16 (4), p.130-132 |
| issn | 0741-3106 1558-0563 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Fatigue Frequency Polarization Pulse shaping methods Random access memory Shape Space vector pulse width modulation Stress Transistors Voltage |
| title | Effects of electrical stress parameters on polarization loss in ferroelectric P(L)ZT thin film capacitors |
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