TiN/TiSi2 formation using TiNx layer and its feasibilities in ULSI
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Veröffentlicht in: | Japanese journal of applied physics 1995, Vol.34 (2B), p.982-986 |
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container_issue | 2B |
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container_title | Japanese journal of applied physics |
container_volume | 34 |
creator | JEONG SOO BYUN CHANG REOL KIM KWAN GOO RHA JAE JEONG KIM WOO SHIK KIM |
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doi_str_mv | 10.1143/JJAP.34.982 |
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identifier | ISSN: 0021-4922 |
ispartof | Japanese journal of applied physics, 1995, Vol.34 (2B), p.982-986 |
issn | 0021-4922 1347-4065 |
language | eng |
recordid | cdi_pascalfrancis_primary_3471280 |
source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
subjects | Condensed matter: structure, mechanical and thermal properties Diffusion interface formation Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Solid surfaces and solid-solid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
title | TiN/TiSi2 formation using TiNx layer and its feasibilities in ULSI |
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