Sub-20 ps high-speed ECL bipolar transistor with low parasitic architecture: Bipolar BiCMOS/CMOS devices and technologies
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on electron devices 1995, Vol.42 (3), p.399-405 |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 405 |
|---|---|
| container_issue | 3 |
| container_start_page | 399 |
| container_title | IEEE transactions on electron devices |
| container_volume | 42 |
| creator | IINUMA, T ITOH, N NAKAJIMA, H INOU, K MATSUDA, S YOSHINO, C TSUBOI, Y KATSUMATA, Y IWAI, H |
| description | |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_3450548</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3450548</sourcerecordid><originalsourceid>FETCH-pascalfrancis_primary_34505483</originalsourceid><addsrcrecordid>eNqNjMsKgkAUQIcoyB7_cBdtB0xH07UYQe1qL9dpzBuWw9wR6e9z0Qe0Ohw4nJkI9klykHmq0rkIwnCfyTzO4qVYMT8nTZWKAnG-DrWMQrAMLT1aydaYO5TFBWqyfYcOvMM3E_vewUi-ha4fwaJDJk8a0OmWvNF-cGYjFg12bLY_rsXuWN6Kk7TIGrtmGmniyjp6oftUsUrCRGXxn9kXOMI_kw</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Sub-20 ps high-speed ECL bipolar transistor with low parasitic architecture: Bipolar BiCMOS/CMOS devices and technologies</title><source>IEEE Electronic Library (IEL)</source><creator>IINUMA, T ; ITOH, N ; NAKAJIMA, H ; INOU, K ; MATSUDA, S ; YOSHINO, C ; TSUBOI, Y ; KATSUMATA, Y ; IWAI, H</creator><creatorcontrib>IINUMA, T ; ITOH, N ; NAKAJIMA, H ; INOU, K ; MATSUDA, S ; YOSHINO, C ; TSUBOI, Y ; KATSUMATA, Y ; IWAI, H</creatorcontrib><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>IEEE transactions on electron devices, 1995, Vol.42 (3), p.399-405</ispartof><rights>1995 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3450548$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>IINUMA, T</creatorcontrib><creatorcontrib>ITOH, N</creatorcontrib><creatorcontrib>NAKAJIMA, H</creatorcontrib><creatorcontrib>INOU, K</creatorcontrib><creatorcontrib>MATSUDA, S</creatorcontrib><creatorcontrib>YOSHINO, C</creatorcontrib><creatorcontrib>TSUBOI, Y</creatorcontrib><creatorcontrib>KATSUMATA, Y</creatorcontrib><creatorcontrib>IWAI, H</creatorcontrib><title>Sub-20 ps high-speed ECL bipolar transistor with low parasitic architecture: Bipolar BiCMOS/CMOS devices and technologies</title><title>IEEE transactions on electron devices</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNqNjMsKgkAUQIcoyB7_cBdtB0xH07UYQe1qL9dpzBuWw9wR6e9z0Qe0Ohw4nJkI9klykHmq0rkIwnCfyTzO4qVYMT8nTZWKAnG-DrWMQrAMLT1aydaYO5TFBWqyfYcOvMM3E_vewUi-ha4fwaJDJk8a0OmWvNF-cGYjFg12bLY_rsXuWN6Kk7TIGrtmGmniyjp6oftUsUrCRGXxn9kXOMI_kw</recordid><startdate>1995</startdate><enddate>1995</enddate><creator>IINUMA, T</creator><creator>ITOH, N</creator><creator>NAKAJIMA, H</creator><creator>INOU, K</creator><creator>MATSUDA, S</creator><creator>YOSHINO, C</creator><creator>TSUBOI, Y</creator><creator>KATSUMATA, Y</creator><creator>IWAI, H</creator><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope></search><sort><creationdate>1995</creationdate><title>Sub-20 ps high-speed ECL bipolar transistor with low parasitic architecture</title><author>IINUMA, T ; ITOH, N ; NAKAJIMA, H ; INOU, K ; MATSUDA, S ; YOSHINO, C ; TSUBOI, Y ; KATSUMATA, Y ; IWAI, H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-pascalfrancis_primary_34505483</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>IINUMA, T</creatorcontrib><creatorcontrib>ITOH, N</creatorcontrib><creatorcontrib>NAKAJIMA, H</creatorcontrib><creatorcontrib>INOU, K</creatorcontrib><creatorcontrib>MATSUDA, S</creatorcontrib><creatorcontrib>YOSHINO, C</creatorcontrib><creatorcontrib>TSUBOI, Y</creatorcontrib><creatorcontrib>KATSUMATA, Y</creatorcontrib><creatorcontrib>IWAI, H</creatorcontrib><collection>Pascal-Francis</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>IINUMA, T</au><au>ITOH, N</au><au>NAKAJIMA, H</au><au>INOU, K</au><au>MATSUDA, S</au><au>YOSHINO, C</au><au>TSUBOI, Y</au><au>KATSUMATA, Y</au><au>IWAI, H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Sub-20 ps high-speed ECL bipolar transistor with low parasitic architecture: Bipolar BiCMOS/CMOS devices and technologies</atitle><jtitle>IEEE transactions on electron devices</jtitle><date>1995</date><risdate>1995</risdate><volume>42</volume><issue>3</issue><spage>399</spage><epage>405</epage><pages>399-405</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1995, Vol.42 (3), p.399-405 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_3450548 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Sub-20 ps high-speed ECL bipolar transistor with low parasitic architecture: Bipolar BiCMOS/CMOS devices and technologies |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T19%3A50%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Sub-20%20ps%20high-speed%20ECL%20bipolar%20transistor%20with%20low%20parasitic%20architecture:%20Bipolar%20BiCMOS/CMOS%20devices%20and%20technologies&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=IINUMA,%20T&rft.date=1995&rft.volume=42&rft.issue=3&rft.spage=399&rft.epage=405&rft.pages=399-405&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/&rft_dat=%3Cpascalfrancis%3E3450548%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |