The role of gas-phase in the laser etching of Cu by CCl4
In the laser etching of surfaces, the gas-surface chemical reaction used may be spontaneous or induced by a laser-gas interaction. We put into evidence a third mechanism allowing to use gas molecules that interact directly neither with the surface nor with the laser but that contains reactive atoms.
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| Veröffentlicht in: | Applied surface science 1996-04, Vol.96-98, p.453-456 |
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| container_end_page | 456 |
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| container_issue | |
| container_start_page | 453 |
| container_title | Applied surface science |
| container_volume | 96-98 |
| creator | De´barre, D. Aliouchouche, A. Boulmer, J. Bourguignon, B. Budin, J.P. |
| description | In the laser etching of surfaces, the gas-surface chemical reaction used may be spontaneous or induced by a laser-gas interaction. We put into evidence a third mechanism allowing to use gas molecules that interact directly neither with the surface nor with the laser but that contains reactive atoms. |
| doi_str_mv | 10.1016/0169-4332(95)00457-2 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0169-4332 |
| ispartof | Applied surface science, 1996-04, Vol.96-98, p.453-456 |
| issn | 0169-4332 1873-5584 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_3140306 |
| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Metals. Metallurgy Physics Surface cleaning, etching, patterning Surface treatments |
| title | The role of gas-phase in the laser etching of Cu by CCl4 |
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