Highly strained InxGa1-xP/GaP quantum wells grown on GaP and on an Inx/2Ga1-x/2P buffer layer by gas-source molecular beam epitaxy
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| Veröffentlicht in: | Journal of crystal growth 1996-08, Vol.165 (3), p.210-214 |
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| Format: | Artikel |
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| container_end_page | 214 |
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| container_issue | 3 |
| container_start_page | 210 |
| container_title | Journal of crystal growth |
| container_volume | 165 |
| creator | BI, W. G TU, C. W |
| description | |
| doi_str_mv | 10.1016/0022-0248(96)00185-6 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 1996-08, Vol.165 (3), p.210-214 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_3134212 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Highly strained InxGa1-xP/GaP quantum wells grown on GaP and on an Inx/2Ga1-x/2P buffer layer by gas-source molecular beam epitaxy |
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