Interface composition dependence of the band offset in InAs/GaSb
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| Veröffentlicht in: | Semiconductor science and technology 1996-05, Vol.11 (5), p.L823-826 |
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| container_end_page | 826 |
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| container_issue | 5 |
| container_start_page | L823 |
| container_title | Semiconductor science and technology |
| container_volume | 11 |
| creator | Daly, M S Symons, D M Lakrimi, M Nicholas, R J Mason, N J Walker, P J |
| description | |
| doi_str_mv | 10.1088/0268-1242/11/5/001 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0268-1242 |
| ispartof | Semiconductor science and technology, 1996-05, Vol.11 (5), p.L823-826 |
| issn | 0268-1242 1361-6641 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_3055134 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electrical properties of specific thin films Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions Iii-v semiconductors Physics |
| title | Interface composition dependence of the band offset in InAs/GaSb |
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