Photomodulated reflectivity of Zn1-xMnxTe/ZnTe multiple-quantum wells with below-bandgap excitation

Photomodulated reflectivity of Zn1-xMnxTe/ZnTe multiple-quantum wells with below-bandgap excitation

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Veröffentlicht in:Semiconductor science and technology 1995-12, Vol.10 (12), p.1568-1577
Hauptverfasser: Klar, P J, Townsley, C M, Wolverson, D, Davies, J J, Ashenford, D E, Lunn, B
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Sprache:eng
Schlagworte:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Ii-vi semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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container_end_page 1577
container_issue 12
container_start_page 1568
container_title Semiconductor science and technology
container_volume 10
creator Klar, P J
Townsley, C M
Wolverson, D
Davies, J J
Ashenford, D E
Lunn, B
description
doi_str_mv 10.1088/0268-1242/10/12/004
format Article
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language eng
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Ii-vi semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
title Photomodulated reflectivity of Zn1-xMnxTe/ZnTe multiple-quantum wells with below-bandgap excitation
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