Defects Study in HgxCd1−xTe Infrared Photodetectors by Deep Level Transient Spectroscopy
At high temperature, infra-red focal plane arrays are limited by their performance in operability, detectivity D * or noise equivalent temperature difference. Trap characterization and defect studies are necessary to better understand these limitations at high temperature. In this paper, we use deep...
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| Veröffentlicht in: | Journal of electronic materials 2014-05, Vol.43 (8), p.3065-3069 |
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| container_title | Journal of electronic materials |
| container_volume | 43 |
| creator | Rubaldo, Laurent Brunner, Alexandre Berthoz, Jocelyn Péré-Laperne, N. Kerlain, A. Abraham, P. Bauza, D. Reimbold, G. Gravrand, Olivier |
| description | At high temperature, infra-red focal plane arrays are limited by their performance in operability, detectivity
D
*
or noise equivalent temperature difference. Trap characterization and defect studies are necessary to better understand these limitations at high temperature. In this paper, we use deep level transient spectroscopy to study electrically active defects in mercury cadmium telluride
n
+
/
p
diodes. The material investigated has a cut-off frequency (
λ
c
) of 2.5
μ
m at 180 K and p doping performed with mercury vacancy. Trap energy signatures as well as capture cross-section measurements are detailed. A low temperature hole trap close to midgap is observed in the range 150–200 K with an activation energy around 0.18 ± 0.025 eV. A high temperature hole trap is also observed in the range 240–300 K with an activation energy of 0.68 ± 0.06 eV. A hole capture cross-section of 10
−19
cm
2
is obtained for both traps. The nature of the defects and their correlation with dark current are discussed. |
| doi_str_mv | 10.1007/s11664-014-3226-y |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_sprin</sourceid><recordid>TN_cdi_pascalfrancis_primary_28700704</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>28700704</sourcerecordid><originalsourceid>FETCH-LOGICAL-p106y-1659977712333281fbf80390806b94d1b998fbda3c4fbd1ae993c475d13526e83</originalsourceid><addsrcrecordid>eNotkMFKAzEURYMoWKsf4C4bl9G8ZCaTLKVVWygotIK4CZlJpk6pM0MyleYPXPuJfokpdXUfvMPlchC6BnoLlBZ3AUCIjFDICGdMkHiCRpBnnIAUb6doRLkAkjOen6OLEDaUQg4SRuh96mpXDQEvh52NuGnxbL2fWPj9_tmvHJ63tTfeWfzy0Q2ddUNiOx9wGfHUuR4v3Jfb4pU3bWhcO-BlnwDfharr4yU6q802uKv_HKPXx4fVZEYWz0_zyf2C9EBFJCBypYqiAMY5ZxLqspaUKyqpKFVmoVRK1qU1vMpSgHFKpbPILfCcCSf5GN0ce3sTKrNNg9uqCbr3zafxUTNZJEE0Sxw7ciG92rXzetPtfJumaaD6YFEfLepkUR8s6sj_AG8CZic</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Defects Study in HgxCd1−xTe Infrared Photodetectors by Deep Level Transient Spectroscopy</title><source>Springer Nature - Complete Springer Journals</source><creator>Rubaldo, Laurent ; Brunner, Alexandre ; Berthoz, Jocelyn ; Péré-Laperne, N. ; Kerlain, A. ; Abraham, P. ; Bauza, D. ; Reimbold, G. ; Gravrand, Olivier</creator><creatorcontrib>Rubaldo, Laurent ; Brunner, Alexandre ; Berthoz, Jocelyn ; Péré-Laperne, N. ; Kerlain, A. ; Abraham, P. ; Bauza, D. ; Reimbold, G. ; Gravrand, Olivier</creatorcontrib><description>At high temperature, infra-red focal plane arrays are limited by their performance in operability, detectivity
D
*
or noise equivalent temperature difference. Trap characterization and defect studies are necessary to better understand these limitations at high temperature. In this paper, we use deep level transient spectroscopy to study electrically active defects in mercury cadmium telluride
n
+
/
p
diodes. The material investigated has a cut-off frequency (
λ
c
) of 2.5
μ
m at 180 K and p doping performed with mercury vacancy. Trap energy signatures as well as capture cross-section measurements are detailed. A low temperature hole trap close to midgap is observed in the range 150–200 K with an activation energy around 0.18 ± 0.025 eV. A high temperature hole trap is also observed in the range 240–300 K with an activation energy of 0.68 ± 0.06 eV. A hole capture cross-section of 10
−19
cm
2
is obtained for both traps. The nature of the defects and their correlation with dark current are discussed.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-014-3226-y</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Applied sciences ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Electronics ; Electronics and Microelectronics ; Exact sciences and technology ; Instrumentation ; Materials Science ; Optical and Electronic Materials ; Optoelectronic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Solid State Physics</subject><ispartof>Journal of electronic materials, 2014-05, Vol.43 (8), p.3065-3069</ispartof><rights>TMS 2014</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-014-3226-y$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-014-3226-y$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,23910,23911,25119,27903,27904,41467,42536,51298</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28700704$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Rubaldo, Laurent</creatorcontrib><creatorcontrib>Brunner, Alexandre</creatorcontrib><creatorcontrib>Berthoz, Jocelyn</creatorcontrib><creatorcontrib>Péré-Laperne, N.</creatorcontrib><creatorcontrib>Kerlain, A.</creatorcontrib><creatorcontrib>Abraham, P.</creatorcontrib><creatorcontrib>Bauza, D.</creatorcontrib><creatorcontrib>Reimbold, G.</creatorcontrib><creatorcontrib>Gravrand, Olivier</creatorcontrib><title>Defects Study in HgxCd1−xTe Infrared Photodetectors by Deep Level Transient Spectroscopy</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>At high temperature, infra-red focal plane arrays are limited by their performance in operability, detectivity
D
*
or noise equivalent temperature difference. Trap characterization and defect studies are necessary to better understand these limitations at high temperature. In this paper, we use deep level transient spectroscopy to study electrically active defects in mercury cadmium telluride
n
+
/
p
diodes. The material investigated has a cut-off frequency (
λ
c
) of 2.5
μ
m at 180 K and p doping performed with mercury vacancy. Trap energy signatures as well as capture cross-section measurements are detailed. A low temperature hole trap close to midgap is observed in the range 150–200 K with an activation energy around 0.18 ± 0.025 eV. A high temperature hole trap is also observed in the range 240–300 K with an activation energy of 0.68 ± 0.06 eV. A hole capture cross-section of 10
−19
cm
2
is obtained for both traps. The nature of the defects and their correlation with dark current are discussed.</description><subject>Applied sciences</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Electronics</subject><subject>Electronics and Microelectronics</subject><subject>Exact sciences and technology</subject><subject>Instrumentation</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Solid State Physics</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotkMFKAzEURYMoWKsf4C4bl9G8ZCaTLKVVWygotIK4CZlJpk6pM0MyleYPXPuJfokpdXUfvMPlchC6BnoLlBZ3AUCIjFDICGdMkHiCRpBnnIAUb6doRLkAkjOen6OLEDaUQg4SRuh96mpXDQEvh52NuGnxbL2fWPj9_tmvHJ63tTfeWfzy0Q2ddUNiOx9wGfHUuR4v3Jfb4pU3bWhcO-BlnwDfharr4yU6q802uKv_HKPXx4fVZEYWz0_zyf2C9EBFJCBypYqiAMY5ZxLqspaUKyqpKFVmoVRK1qU1vMpSgHFKpbPILfCcCSf5GN0ce3sTKrNNg9uqCbr3zafxUTNZJEE0Sxw7ciG92rXzetPtfJumaaD6YFEfLepkUR8s6sj_AG8CZic</recordid><startdate>20140528</startdate><enddate>20140528</enddate><creator>Rubaldo, Laurent</creator><creator>Brunner, Alexandre</creator><creator>Berthoz, Jocelyn</creator><creator>Péré-Laperne, N.</creator><creator>Kerlain, A.</creator><creator>Abraham, P.</creator><creator>Bauza, D.</creator><creator>Reimbold, G.</creator><creator>Gravrand, Olivier</creator><general>Springer US</general><general>Springer</general><scope>IQODW</scope></search><sort><creationdate>20140528</creationdate><title>Defects Study in HgxCd1−xTe Infrared Photodetectors by Deep Level Transient Spectroscopy</title><author>Rubaldo, Laurent ; Brunner, Alexandre ; Berthoz, Jocelyn ; Péré-Laperne, N. ; Kerlain, A. ; Abraham, P. ; Bauza, D. ; Reimbold, G. ; Gravrand, Olivier</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p106y-1659977712333281fbf80390806b94d1b998fbda3c4fbd1ae993c475d13526e83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied sciences</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Electronics</topic><topic>Electronics and Microelectronics</topic><topic>Exact sciences and technology</topic><topic>Instrumentation</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Optoelectronic devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Solid State Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rubaldo, Laurent</creatorcontrib><creatorcontrib>Brunner, Alexandre</creatorcontrib><creatorcontrib>Berthoz, Jocelyn</creatorcontrib><creatorcontrib>Péré-Laperne, N.</creatorcontrib><creatorcontrib>Kerlain, A.</creatorcontrib><creatorcontrib>Abraham, P.</creatorcontrib><creatorcontrib>Bauza, D.</creatorcontrib><creatorcontrib>Reimbold, G.</creatorcontrib><creatorcontrib>Gravrand, Olivier</creatorcontrib><collection>Pascal-Francis</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rubaldo, Laurent</au><au>Brunner, Alexandre</au><au>Berthoz, Jocelyn</au><au>Péré-Laperne, N.</au><au>Kerlain, A.</au><au>Abraham, P.</au><au>Bauza, D.</au><au>Reimbold, G.</au><au>Gravrand, Olivier</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Defects Study in HgxCd1−xTe Infrared Photodetectors by Deep Level Transient Spectroscopy</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2014-05-28</date><risdate>2014</risdate><volume>43</volume><issue>8</issue><spage>3065</spage><epage>3069</epage><pages>3065-3069</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>At high temperature, infra-red focal plane arrays are limited by their performance in operability, detectivity
D
*
or noise equivalent temperature difference. Trap characterization and defect studies are necessary to better understand these limitations at high temperature. In this paper, we use deep level transient spectroscopy to study electrically active defects in mercury cadmium telluride
n
+
/
p
diodes. The material investigated has a cut-off frequency (
λ
c
) of 2.5
μ
m at 180 K and p doping performed with mercury vacancy. Trap energy signatures as well as capture cross-section measurements are detailed. A low temperature hole trap close to midgap is observed in the range 150–200 K with an activation energy around 0.18 ± 0.025 eV. A high temperature hole trap is also observed in the range 240–300 K with an activation energy of 0.68 ± 0.06 eV. A hole capture cross-section of 10
−19
cm
2
is obtained for both traps. The nature of the defects and their correlation with dark current are discussed.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s11664-014-3226-y</doi><tpages>5</tpages></addata></record> |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Applied sciences Characterization and Evaluation of Materials Chemistry and Materials Science Electronics Electronics and Microelectronics Exact sciences and technology Instrumentation Materials Science Optical and Electronic Materials Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid State Physics |
| title | Defects Study in HgxCd1−xTe Infrared Photodetectors by Deep Level Transient Spectroscopy |
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