Thermoelectric properties of highly efficient Bi-doped Mg2Si1−x−ySnxGey materials

In this work, Bi-doped Mg2Si1−x−ySnxGey (x=0.4 and y=0.05) solid solutions with the nominal Bi content of 0⩽z⩽0.035 were synthesized by solid state synthesis and sintering via hot pressing, and were studied in terms of structural, electronic transport and thermoelectric properties. These materials e...

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Veröffentlicht in:Acta materialia 2014-09, Vol.77, p.43-53
Hauptverfasser: Khan, A.U., Vlachos, N.V., Hatzikraniotis, E., Polymeris, G.S., Lioutas, Ch.B., Stefanaki, E.C., Paraskevopoulos, K.M., Giapintzakis, I., Kyratsi, Th
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Sprache:eng
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