Thermoelectric properties of highly efficient Bi-doped Mg2Si1−x−ySnxGey materials
In this work, Bi-doped Mg2Si1−x−ySnxGey (x=0.4 and y=0.05) solid solutions with the nominal Bi content of 0⩽z⩽0.035 were synthesized by solid state synthesis and sintering via hot pressing, and were studied in terms of structural, electronic transport and thermoelectric properties. These materials e...
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Veröffentlicht in: | Acta materialia 2014-09, Vol.77, p.43-53 |
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Sprache: | eng |
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