Single-chip InGaN green light-emitting diodes with 3 W optical output power

The characteristics of a high-power single-chip green light-emitting diode (LED) operating with a >40 W input power are reported. The single-chip large area LED chip, which consists of 24 stages, was fabricated by using commercial wafers with chip dimensions of 6.5 × 5 mm2. The electrical and opt...

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Veröffentlicht in:	Electronics letters 2014-03, Vol.50 (6), p.457-459
Hauptverfasser:	Wang, Wei, Cai, Yong, Huang, Juan Hong, Huang, Wei, Li, Haiou, Lin, Xin, Zhou, Ximing, Zhang, Baosun
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences chip dimensions commercial wafers current 500 mA direct operation conditions electrical characteristics Electronics Exact sciences and technology external quantum efficiency forward voltage high‐power single‐chip green light‐emitting diode III‐V semiconductors indium compounds InGaN injection current Integrated circuits Integrated circuits by function (including memories and processors) LED light emitting diodes optical characteristics optical output power Optoelectronic devices Photonics power 3 W power 41.5 W Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices single‐chip InGaN green light‐emitting diodes voltage 83 V wide band gap semiconductors
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