Influence of Ge substrate orientation on crystalline structures of Ge1−xSnx epitaxial layers

We have investigated the substrate orientation dependence of the crystallinity and strain relaxation behavior of Ge and Ge1−xSnx layers epitaxially grown on Ge(001), (110), and (111) substrates. The strain relaxation in Ge1−xSnx layers on Ge(110) and (111) occurs from a strain value smaller than tha...

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Veröffentlicht in:	Thin solid films 2014-04, Vol.557, p.159-163
Hauptverfasser:	Asano, Takanori, Kidowaki, Shohei, Kurosawa, Masashi, Taoka, Noriyuki, Nakatsuka, Osamu, Zaima, Shigeaki
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Epitaxial growth Exact sciences and technology Germanium Materials science Mechanical and acoustical properties Methods of deposition of films and coatings film growth and epitaxy Physical properties of thin films, nonelectronic Physics Strain relaxation Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of film growth Thin film structure and morphology Tin
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