A Memristor SPICE Model Accounting for Volatile Characteristics of Practical ReRAM

Realizing large-scale circuits utilizing emerging nanoionic devices known as memristors depends on the accurate modeling of their behavior under a wide range of biasing conditions. Currently, no available SPICE memristor model accounts for both nonvolatile and volatile resistive switching characteri...

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Veröffentlicht in:	IEEE electron device letters 2014-01, Vol.35 (1), p.135-137
Hauptverfasser:	Berdan, Radu, Chuan Lim, Khiat, Ali, Papavassiliou, Christos, Prodromakis, Themis
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Integrated circuit modeling Magnetic and optical mass memories memristive devices Memristor Memristors Nanoscale devices non-volatile ReRAM Resistance SPICE Storage and reproduction of information Switches Timing volatility {\rm TiO}_{2}
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