Improvement in the Photo-Bias Stability of Zinc Tin Oxide Thin-Film Transistors by Introducing a Thermal Oxidized TiO2 Film as a Hole Carrier Blocking Layer
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| Veröffentlicht in: | IEEE transactions on electron devices 2013-12, Vol.60 (12), p.4165-4172 |
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| container_end_page | 4172 |
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| container_issue | 12 |
| container_start_page | 4165 |
| container_title | IEEE transactions on electron devices |
| container_volume | 60 |
| creator | LEE, Chang-Kyu AH YOUNG HWANG HOICHANG YANG KIM, Dae-Hwan BAE, Jong-Uk SHIN, Woo-Sup JAE KYEONG JEONG |
| description | |
| doi_str_mv | 10.1109/TED.2013.2286819 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2013-12, Vol.60 (12), p.4165-4172 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_28073047 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Materials science Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Improvement in the Photo-Bias Stability of Zinc Tin Oxide Thin-Film Transistors by Introducing a Thermal Oxidized TiO2 Film as a Hole Carrier Blocking Layer |
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