Design of S-Graded Buffer Layers for Metamorphic ZnSySe1−y/GaAs (001) Semiconductor Devices

We present design equations for error function (or “S-graded”) graded buffers for use in accommodating lattice mismatch of heteroepitaxial semiconductor devices. In an S-graded metamorphic buffer layer the composition and lattice mismatch profiles follow a normal cumulative distribution function. Mi...

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Veröffentlicht in:	Journal of electronic materials 2013, Vol.42 (12), p.3408-3420
Hauptverfasser:	Kujofsa, T., Antony, A., Xhurxhi, S., Obst, F., Sidoti, D., Bertoli, B., Cheruku, S., Correa, J. P., Rago, P. B., Suarez, E. N., Jain, F. C., Ayers, J. E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Electronics and Microelectronics Exact sciences and technology Instrumentation Linear defects: dislocations, disclinations Materials Science Optical and Electronic Materials Physics Solid State Physics Structure of solids and liquids crystallography Structure of specific crystalline solids
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