An Ultralow Specific ON-Resistance LDMOST Using Charge Balance by Split p-Gate and n-Drift Regions

A laterally diffused metal-oxide-semiconductor transistor (LDMOST) with ultralow specific ON-resistance (R sp ) is studied. In the OFF-state, the split p-type gate is depleted to achieve charge compensation with the n-type drift region, allowing a high n-drift doping. In the ON-state, holes accumula...

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Veröffentlicht in:	IEEE transactions on electron devices 2013-11, Vol.60 (11), p.3821-3826
Hauptverfasser:	Lyu, Xinjiang, Chen, Xingbi
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Charge carrier processes Dielectric, amorphous and glass solid devices Doping Electric breakdown Electrodes Electron accumulation Electronics Exact sciences and technology gate charge laterally diffused metal-oxide-semiconductor transistor Logic gates Resistance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices specific ON-resistance split gate Switches Transistors
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