Ultrafine Particle Removal Using Gas Cluster Ion Beam Technology
In this paper, the ultrafine particle removal using CO 2 gas cluster ion beam (GCIB) technology is investigated. The CO 2 GCIB is irradiated the sample at an angle of 0 ° with respect to the surface normal. The higher particle removal efficiency can be achieved at the higher kinetic energy of the ga...
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| Veröffentlicht in: | IEEE transactions on semiconductor manufacturing 2013-08, Vol.26 (3), p.328-334 |
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| creator | Dobashi, Kazuya Inai, Kensuke Saito, Misako Seki, Toshio Aoki, Takaaki Matsuo, Jiro |
| description | In this paper, the ultrafine particle removal using CO 2 gas cluster ion beam (GCIB) technology is investigated. The CO 2 GCIB is irradiated the sample at an angle of 0 ° with respect to the surface normal. The higher particle removal efficiency can be achieved at the higher kinetic energy of the gas cluster, and the inside space of line and space pattern particles can be removed. We also suggested that the CO 2 GCIB process has the high particle removal uniformity without redeposition of the removed particles. It is possible to remove the ultrafine particle as small as 12 nm in diameter (which is required for 2014 by ITRS 2011). The pattern damage is not observed for 45 nm poly-Si pattern. Moreover, the molecular dynamics simulation is performed to investigate the mechanisms of the particle removal by GCIB irradiation. |
| doi_str_mv | 10.1109/TSM.2013.2268871 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_RIE</sourceid><recordid>TN_cdi_pascalfrancis_primary_27678275</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6542736</ieee_id><sourcerecordid>27678275</sourcerecordid><originalsourceid>FETCH-LOGICAL-c293t-db11d49fd693733cb04bd72c6048a85a73b72715e03d8e4979033a3697a4b02f3</originalsourceid><addsrcrecordid>eNo9kE1Lw0AURQdRsFb3gpvZuEx9M28-d2rRWqgo2q7DZDKpkTSRmSj035vS0tVdvHsel0PINYMJY2Dvlp-vEw4MJ5wrYzQ7ISMmpck4CnlKRmCsyJQEfU4uUvoGYEJYPSL3q6aPrqrbQN9d7GvfBPoRNt2fa-gq1e2azlyi0-Y39SHSedfSx-A2dBn8V9s13Xp7Sc4q16RwdcgxWT0_Lacv2eJtNp8-LDLPLfZZWTBWCluVyqJG9AWIotTcKxDGGek0FpprJgNgacIwzQKiQ2W1EwXwCscE9n997FKKocp_Yr1xcZszyHcG8sFAvjOQHwwMyO0e-XHJu6aKrvV1OnJcK224lkPvZt-rQwjHs5KCa1T4D6RcYtc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Ultrafine Particle Removal Using Gas Cluster Ion Beam Technology</title><source>IEEE Electronic Library (IEL)</source><creator>Dobashi, Kazuya ; Inai, Kensuke ; Saito, Misako ; Seki, Toshio ; Aoki, Takaaki ; Matsuo, Jiro</creator><creatorcontrib>Dobashi, Kazuya ; Inai, Kensuke ; Saito, Misako ; Seki, Toshio ; Aoki, Takaaki ; Matsuo, Jiro</creatorcontrib><description>In this paper, the ultrafine particle removal using CO 2 gas cluster ion beam (GCIB) technology is investigated. The CO 2 GCIB is irradiated the sample at an angle of 0 ° with respect to the surface normal. The higher particle removal efficiency can be achieved at the higher kinetic energy of the gas cluster, and the inside space of line and space pattern particles can be removed. We also suggested that the CO 2 GCIB process has the high particle removal uniformity without redeposition of the removed particles. It is possible to remove the ultrafine particle as small as 12 nm in diameter (which is required for 2014 by ITRS 2011). The pattern damage is not observed for 45 nm poly-Si pattern. Moreover, the molecular dynamics simulation is performed to investigate the mechanisms of the particle removal by GCIB irradiation.</description><identifier>ISSN: 0894-6507</identifier><identifier>EISSN: 1558-2345</identifier><identifier>DOI: 10.1109/TSM.2013.2268871</identifier><identifier>CODEN: ITSMED</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Cross-disciplinary physics: materials science; rheology ; Damage-free cleaning ; Exact sciences and technology ; gas cluster beam technology ; Materials science ; physical cleaning ; Physics ; Surface treatments ; ultrafine particle removal</subject><ispartof>IEEE transactions on semiconductor manufacturing, 2013-08, Vol.26 (3), p.328-334</ispartof><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-db11d49fd693733cb04bd72c6048a85a73b72715e03d8e4979033a3697a4b02f3</citedby><cites>FETCH-LOGICAL-c293t-db11d49fd693733cb04bd72c6048a85a73b72715e03d8e4979033a3697a4b02f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6542736$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,792,23910,23911,25119,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6542736$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27678275$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Dobashi, Kazuya</creatorcontrib><creatorcontrib>Inai, Kensuke</creatorcontrib><creatorcontrib>Saito, Misako</creatorcontrib><creatorcontrib>Seki, Toshio</creatorcontrib><creatorcontrib>Aoki, Takaaki</creatorcontrib><creatorcontrib>Matsuo, Jiro</creatorcontrib><title>Ultrafine Particle Removal Using Gas Cluster Ion Beam Technology</title><title>IEEE transactions on semiconductor manufacturing</title><addtitle>TSM</addtitle><description>In this paper, the ultrafine particle removal using CO 2 gas cluster ion beam (GCIB) technology is investigated. The CO 2 GCIB is irradiated the sample at an angle of 0 ° with respect to the surface normal. The higher particle removal efficiency can be achieved at the higher kinetic energy of the gas cluster, and the inside space of line and space pattern particles can be removed. We also suggested that the CO 2 GCIB process has the high particle removal uniformity without redeposition of the removed particles. It is possible to remove the ultrafine particle as small as 12 nm in diameter (which is required for 2014 by ITRS 2011). The pattern damage is not observed for 45 nm poly-Si pattern. Moreover, the molecular dynamics simulation is performed to investigate the mechanisms of the particle removal by GCIB irradiation.</description><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Damage-free cleaning</subject><subject>Exact sciences and technology</subject><subject>gas cluster beam technology</subject><subject>Materials science</subject><subject>physical cleaning</subject><subject>Physics</subject><subject>Surface treatments</subject><subject>ultrafine particle removal</subject><issn>0894-6507</issn><issn>1558-2345</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1Lw0AURQdRsFb3gpvZuEx9M28-d2rRWqgo2q7DZDKpkTSRmSj035vS0tVdvHsel0PINYMJY2Dvlp-vEw4MJ5wrYzQ7ISMmpck4CnlKRmCsyJQEfU4uUvoGYEJYPSL3q6aPrqrbQN9d7GvfBPoRNt2fa-gq1e2azlyi0-Y39SHSedfSx-A2dBn8V9s13Xp7Sc4q16RwdcgxWT0_Lacv2eJtNp8-LDLPLfZZWTBWCluVyqJG9AWIotTcKxDGGek0FpprJgNgacIwzQKiQ2W1EwXwCscE9n997FKKocp_Yr1xcZszyHcG8sFAvjOQHwwMyO0e-XHJu6aKrvV1OnJcK224lkPvZt-rQwjHs5KCa1T4D6RcYtc</recordid><startdate>20130801</startdate><enddate>20130801</enddate><creator>Dobashi, Kazuya</creator><creator>Inai, Kensuke</creator><creator>Saito, Misako</creator><creator>Seki, Toshio</creator><creator>Aoki, Takaaki</creator><creator>Matsuo, Jiro</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130801</creationdate><title>Ultrafine Particle Removal Using Gas Cluster Ion Beam Technology</title><author>Dobashi, Kazuya ; Inai, Kensuke ; Saito, Misako ; Seki, Toshio ; Aoki, Takaaki ; Matsuo, Jiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-db11d49fd693733cb04bd72c6048a85a73b72715e03d8e4979033a3697a4b02f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Damage-free cleaning</topic><topic>Exact sciences and technology</topic><topic>gas cluster beam technology</topic><topic>Materials science</topic><topic>physical cleaning</topic><topic>Physics</topic><topic>Surface treatments</topic><topic>ultrafine particle removal</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dobashi, Kazuya</creatorcontrib><creatorcontrib>Inai, Kensuke</creatorcontrib><creatorcontrib>Saito, Misako</creatorcontrib><creatorcontrib>Seki, Toshio</creatorcontrib><creatorcontrib>Aoki, Takaaki</creatorcontrib><creatorcontrib>Matsuo, Jiro</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE transactions on semiconductor manufacturing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Dobashi, Kazuya</au><au>Inai, Kensuke</au><au>Saito, Misako</au><au>Seki, Toshio</au><au>Aoki, Takaaki</au><au>Matsuo, Jiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ultrafine Particle Removal Using Gas Cluster Ion Beam Technology</atitle><jtitle>IEEE transactions on semiconductor manufacturing</jtitle><stitle>TSM</stitle><date>2013-08-01</date><risdate>2013</risdate><volume>26</volume><issue>3</issue><spage>328</spage><epage>334</epage><pages>328-334</pages><issn>0894-6507</issn><eissn>1558-2345</eissn><coden>ITSMED</coden><abstract>In this paper, the ultrafine particle removal using CO 2 gas cluster ion beam (GCIB) technology is investigated. The CO 2 GCIB is irradiated the sample at an angle of 0 ° with respect to the surface normal. The higher particle removal efficiency can be achieved at the higher kinetic energy of the gas cluster, and the inside space of line and space pattern particles can be removed. We also suggested that the CO 2 GCIB process has the high particle removal uniformity without redeposition of the removed particles. It is possible to remove the ultrafine particle as small as 12 nm in diameter (which is required for 2014 by ITRS 2011). The pattern damage is not observed for 45 nm poly-Si pattern. Moreover, the molecular dynamics simulation is performed to investigate the mechanisms of the particle removal by GCIB irradiation.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TSM.2013.2268871</doi><tpages>7</tpages></addata></record> |
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| subjects | Cross-disciplinary physics: materials science rheology Damage-free cleaning Exact sciences and technology gas cluster beam technology Materials science physical cleaning Physics Surface treatments ultrafine particle removal |
| title | Ultrafine Particle Removal Using Gas Cluster Ion Beam Technology |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T21%3A01%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Ultrafine%20Particle%20Removal%20Using%20Gas%20Cluster%20Ion%20Beam%20Technology&rft.jtitle=IEEE%20transactions%20on%20semiconductor%20manufacturing&rft.au=Dobashi,%20Kazuya&rft.date=2013-08-01&rft.volume=26&rft.issue=3&rft.spage=328&rft.epage=334&rft.pages=328-334&rft.issn=0894-6507&rft.eissn=1558-2345&rft.coden=ITSMED&rft_id=info:doi/10.1109/TSM.2013.2268871&rft_dat=%3Cpascalfrancis_RIE%3E27678275%3C/pascalfrancis_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6542736&rfr_iscdi=true |