Enhanced deposition rate of sputtered amorphous silicon with a helium and argon gas mixture
Sputtered amorphous silicon thin films have been grown in an atmosphere of helium-argon gas and the effect of helium dilution investigated. The major observed feature is that helium dilution enhances the deposition rate. The highest deposition rate, six times larger than that obtained under conventi...
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| Veröffentlicht in: | Philosophical magazine letters 1997-08, Vol.76 (2), p.117-123 |
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| container_end_page | 123 |
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| container_issue | 2 |
| container_start_page | 117 |
| container_title | Philosophical magazine letters |
| container_volume | 76 |
| creator | Aida, M.S. Attaf, N. Benzegouta, A. Hadjeris, L. Selmi, M. Abdelwahab, O. |
| description | Sputtered amorphous silicon thin films have been grown in an atmosphere of helium-argon gas and the effect of helium dilution investigated. The major observed feature is that helium dilution enhances the deposition rate. The highest deposition rate, six times larger than that obtained under conventional conditions, is reached with equal proportions of helium and argon in the deposition chamber. The influence of helium dilution is explained on the basis of an increase in the argon ionization rate with helium dilution. |
| doi_str_mv | 10.1080/095008397179309 |
| format | Article |
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The major observed feature is that helium dilution enhances the deposition rate. The highest deposition rate, six times larger than that obtained under conventional conditions, is reached with equal proportions of helium and argon in the deposition chamber. The influence of helium dilution is explained on the basis of an increase in the argon ionization rate with helium dilution.</abstract><cop>London</cop><pub>Taylor & Francis Group</pub><doi>10.1080/095008397179309</doi><tpages>7</tpages></addata></record> |
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| identifier | ISSN: 0950-0839 |
| ispartof | Philosophical magazine letters, 1997-08, Vol.76 (2), p.117-123 |
| issn | 0950-0839 1362-3036 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_2755685 |
| source | Periodicals Index Online; Taylor & Francis Journals Complete |
| subjects | Cross-disciplinary physics: materials science rheology Deposition by sputtering Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics |
| title | Enhanced deposition rate of sputtered amorphous silicon with a helium and argon gas mixture |
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