Preparation and Properties of Si Doped Mg(B1-xCx)2 Using Silica Sol-Gel and Carbon Chemical Vapor Coated Boron

Preparation and Properties of Si Doped Mg(B1-xCx)2 Using Silica Sol-Gel and Carbon Chemical Vapor Coated Boron

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Hauptverfasser: PAOLELLA, M, BAVYKIN, D, YOUNG, E. A
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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BAVYKIN, D
YOUNG, E. A
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doi_str_mv 10.1109/TASC.2013.2245176
format Conference Proceeding
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ispartof IEEE transactions on applied superconductivity, 2013, Vol.23 (3)
issn 1051-8223
1558-2515
language eng
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source IEEE Electronic Library (IEL)
subjects Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Preparation and Properties of Si Doped Mg(B1-xCx)2 Using Silica Sol-Gel and Carbon Chemical Vapor Coated Boron
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