Doping Process for 3-D N-Type Trench Transistors-2-D Cross-Sectional Doping Profiling Study

Comparison study of doping a 3-D trench transistor structure is carried out by beam-line (BL) implant and plasma doping (PLAD) methods. Electron holography (EH) is used as a powerful characterization method to study 2-D cross-sectional doping profiles of arsenic-based doping processes. Quantitative...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 2013-07, Vol.60 (7), p.2256-2260
Hauptverfasser:	Shu Qin, Zhouguang Wang, Hu, Y. J., McTeer, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	3-D trench transistor Annealing Applied sciences Arrays Doping electron holography (EH) Electronics Exact sciences and technology Implants Junctions Mass spectrometry plasma doping (PLAD) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Transistors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!