Surface Interrogation Scanning Electrochemical Microscopy (SI-SECM) of Photoelectrochemistry at a W/Mo-BiVO4 Semiconductor Electrode: Quantification of Hydroxyl Radicals during Water Oxidation

Reaction kinetics and surface coverage of water oxidation intermediates at a W/Mo-BiVO4 photoanode were studied using surface interrogation scanning electrochemical microscopy (SI-SECM). Adsorbed hydroxyl radicals (OH•) were produced during water oxidation at the semiconductor surface under UV–visib...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of physical chemistry. C 2013-06, Vol.117 (23), p.12093-12102
Hauptverfasser:	Park, Hyun S, Leonard, Kevin C, Bard, Allen J
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physical radiation effects, radiation damage Physics Structure of solids and liquids crystallography
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!