Photoluminescence from SiNxOy films deposited by reactive sputtering

Non-stoichiometric silicon nitride films with photoluminescence (PL) properties were synthesized by reactive sputtering from a silicon target. The compositions were obtained quantitatively by Rutherford backscattering spectroscopy (RBS). Thermal annealing was performed to activate the emission centr...

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Veröffentlicht in:Journal of physics. D, Applied physics Applied physics, 2013-06, Vol.46 (23)
Hauptverfasser: Sombrio, G, Franzen, P L, Maltez, R L, Matos, L G, Pereira, M B, Boudinov, H
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Sprache:eng
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