Photoluminescence from SiNxOy films deposited by reactive sputtering
Non-stoichiometric silicon nitride films with photoluminescence (PL) properties were synthesized by reactive sputtering from a silicon target. The compositions were obtained quantitatively by Rutherford backscattering spectroscopy (RBS). Thermal annealing was performed to activate the emission centr...
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| Veröffentlicht in: | Journal of physics. D, Applied physics Applied physics, 2013-06, Vol.46 (23) |
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| container_title | Journal of physics. D, Applied physics |
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| creator | Sombrio, G Franzen, P L Maltez, R L Matos, L G Pereira, M B Boudinov, H |
| description | Non-stoichiometric silicon nitride films with photoluminescence (PL) properties were synthesized by reactive sputtering from a silicon target. The compositions were obtained quantitatively by Rutherford backscattering spectroscopy (RBS). Thermal annealing was performed to activate the emission centres. The excitation wavelength in the PL measurements was 266 nm and the laser power was kept at 1 mW (irradiance of 0.35 mW mm−2) in all measurements. The values of refractive index were obtained by spectral ellipsometry, confirming the RBS results qualitatively. Transmission electron microscopy measurements showed the presence of α-Si3N4, β-Si3N4 and Si2N2O crystalline structures. PL emission was predominantly from localized levels related to defect sites. An ultraviolet band (3.8 ± 0.1 eV) was observed in the emission from the samples with higher oxygen concentration. |
| doi_str_mv | 10.1088/0022-3727/46/23/235106 |
| format | Article |
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The compositions were obtained quantitatively by Rutherford backscattering spectroscopy (RBS). Thermal annealing was performed to activate the emission centres. The excitation wavelength in the PL measurements was 266 nm and the laser power was kept at 1 mW (irradiance of 0.35 mW mm−2) in all measurements. The values of refractive index were obtained by spectral ellipsometry, confirming the RBS results qualitatively. Transmission electron microscopy measurements showed the presence of α-Si3N4, β-Si3N4 and Si2N2O crystalline structures. PL emission was predominantly from localized levels related to defect sites. 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An ultraviolet band (3.8 ± 0.1 eV) was observed in the emission from the samples with higher oxygen concentration.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Exact sciences and technology</subject><subject>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of bulk materials and thin films</subject><subject>Physics</subject><issn>0022-3727</issn><issn>1361-6463</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNo9kM1KAzEYRYMoWKuvINm4HPvlp0lmKVWrUKygrkMm80VT5o9kKvbtbakIF-7mcLkcQq4Z3DIwZgbAeSE01zOpZlzsM2egTsiECcUKJZU4JZN_6Jxc5LwBgLkybELuX7_6sW-2bewwe-w80pD6lr7Fl5_1jobYtJnWOPQ5jljTakcTOj_Gb6R52I4jpth9XpKz4JqMV389JR-PD--Lp2K1Xj4v7lZF5NyMxZwFX1UKncSgK2BcSWYQvSi1rliQrDaB18E5Aw6lLA0vVe1cDRC0gyDElNwcdweXvWtCcp2P2Q4pti7tLNdSclXqPcePXOwHu-m3qdu_sgzswZc9qLAHFVYqy4U9-hK_FOZe1A</recordid><startdate>20130613</startdate><enddate>20130613</enddate><creator>Sombrio, G</creator><creator>Franzen, P L</creator><creator>Maltez, R L</creator><creator>Matos, L G</creator><creator>Pereira, M B</creator><creator>Boudinov, H</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>IQODW</scope></search><sort><creationdate>20130613</creationdate><title>Photoluminescence from SiNxOy films deposited by reactive sputtering</title><author>Sombrio, G ; Franzen, P L ; Maltez, R L ; Matos, L G ; Pereira, M B ; Boudinov, H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i228t-51fcbb6ea4ef7b0126418eec3977b1f41d8f2dfaa80ae4498296daad00f7a0f33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Exact sciences and technology</topic><topic>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of bulk materials and thin films</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sombrio, G</creatorcontrib><creatorcontrib>Franzen, P L</creatorcontrib><creatorcontrib>Maltez, R L</creatorcontrib><creatorcontrib>Matos, L G</creatorcontrib><creatorcontrib>Pereira, M B</creatorcontrib><creatorcontrib>Boudinov, H</creatorcontrib><collection>Pascal-Francis</collection><jtitle>Journal of physics. 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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Physics |
| title | Photoluminescence from SiNxOy films deposited by reactive sputtering |
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