Low-operating-voltage 1.5-μm-electroluminescent device with an Er-doped silicon suboxide layer and electron injection from tin oxide

A new scheme for a silicon-oxide-based electroluminescent device is proposed and demonstrated. This scheme employs a thin Er-doped silicon suboxide active layer. Its low oxygen content and a tin-oxide electron injection layer have led to the realization of low voltage operation since they could redu...

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Veröffentlicht in:	Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2013-02, Vol.48, p.187-190
Hauptverfasser:	Naka, Yoshihiro, Soneda, Shinya, Nakano, Seiichi, Sumiyoshi, Takeshi, Tsuchiya, Masahiro, Nakamura, Yusui
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron and ion emission by liquids and solids impact phenomena Electronics Exact sciences and technology Interfaces, heterostructures, nanostructures Optoelectronic devices Photoemission and photoelectron spectra Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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