Reduction of recombination velocity on GaAs surface by Ga-S and As-S bond-related surface states from (NH4)2Sx treatment

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Veröffentlicht in:	Journal of the Electrochemical Society 1997, Vol.144 (6), p.2106-2115
Hauptverfasser:	SIK, H, FEURPRIER, Y, CARDINAUD, C, TURBAN, G, SCAVENNEC, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface and interface electron states Surface states, band structure, electron density of states
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doi_str_mv	10.1149/1.1837749
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subjects	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface and interface electron states Surface states, band structure, electron density of states
title	Reduction of recombination velocity on GaAs surface by Ga-S and As-S bond-related surface states from (NH4)2Sx treatment
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