Experimental and Simulated Cycling of ISFET Electric Fields for Drift Reset

We demonstrate the cycling of electric fields within an ion-sensitive field-effect transistor (ISFET) as a method to control drift. ISFETs had a repeatable drift pattern when cycling the vertical electric field by changing the voltage between the reference electrode and the substrate. Cycling the ho...

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Veröffentlicht in:	IEEE electron device letters 2013-03, Vol.34 (3), p.456-458
Hauptverfasser:	Welch, D., Shah, S., Ozev, S., Blain Christen, Jennifer
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Biomedical monitoring drift Electrodes Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology ion-sensitive field-effect transistor (ISFET) Ions Mathematical model Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Switches Transistors
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