Trapping and Recombination Properties of the Acceptor-like VZn-H Complex Defect in ZnO
We report trapping and recombination centers with an acceptor-like character VZn and their defect complex in unintentional hydrogen-doped ZnO nanoparticles using photoluminescence and electron paramagnetic resonance (EPR) techniques. Further, we demonstrate the existence of a VZn–H complex defect re...
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| Veröffentlicht in: | Journal of physical chemistry. C 2013-02, Vol.117 (8), p.4299-4303 |
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| container_title | Journal of physical chemistry. C |
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| creator | Senthilkumar, K Subramanian, M Ebisu, H Tanemura, M Fujita, Y |
| description | We report trapping and recombination centers with an acceptor-like character VZn and their defect complex in unintentional hydrogen-doped ZnO nanoparticles using photoluminescence and electron paramagnetic resonance (EPR) techniques. Further, we demonstrate the existence of a VZn–H complex defect related to local vibrational modes (LVMs) by Raman spectroscopy. EPR measurement confirms the characteristics of an uncompensated donor and acceptor under UV illumination in addition to the existence of multiple trapping centers even when the samples are subjected to high-temperature annealing; some of the LVMs related to VZn–H complex defect still persist with less intensity due to high thermal stability. Hydrogen bonding with native defect in ZnO lattice and their charge states are found to play a crucial role in achieving the donor and acceptor characteristics. |
| doi_str_mv | 10.1021/jp312209c |
| format | Article |
| fullrecord | <record><control><sourceid>acs_pasca</sourceid><recordid>TN_cdi_pascalfrancis_primary_27129836</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>b626180607</sourcerecordid><originalsourceid>FETCH-LOGICAL-a281t-714f6af0854838cdebdea07e9d35ffbfe3d324c6020151998b2c7d6b87cee3023</originalsourceid><addsrcrecordid>eNpFkE9LwzAchoMoOKcHv0EuHqv50zbpcVTdhMFE5g67lDT9RVPbJCQV9NurKPP0voeXh5cHoUtKrilh9KYPnDJGKn2EZrTiLBN5URwfei5O0VlKPSEFJ5TP0G4bVQjWvWDlOvwE2o-tdWqy3uHH6APEyULC3uDpFfBCawiTj9lg3wDv9i5b4dqPYYAPfAsG9IStw3u3OUcnRg0JLv5yjp7v77b1Kltvlg_1Yp0pJumUCZqbUhkii1xyqTtoO1BEQNXxwpjWAO84y3VJGKEFrSrZMi26spVCA3DC-Bxd_XKDSloNJiqnbWpCtKOKnw0TlFWSl_87pVPT-_fovl81lDQ_0pqDNP4FzEZeZA</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Trapping and Recombination Properties of the Acceptor-like VZn-H Complex Defect in ZnO</title><source>ACS Publications</source><creator>Senthilkumar, K ; Subramanian, M ; Ebisu, H ; Tanemura, M ; Fujita, Y</creator><creatorcontrib>Senthilkumar, K ; Subramanian, M ; Ebisu, H ; Tanemura, M ; Fujita, Y</creatorcontrib><description>We report trapping and recombination centers with an acceptor-like character VZn and their defect complex in unintentional hydrogen-doped ZnO nanoparticles using photoluminescence and electron paramagnetic resonance (EPR) techniques. Further, we demonstrate the existence of a VZn–H complex defect related to local vibrational modes (LVMs) by Raman spectroscopy. EPR measurement confirms the characteristics of an uncompensated donor and acceptor under UV illumination in addition to the existence of multiple trapping centers even when the samples are subjected to high-temperature annealing; some of the LVMs related to VZn–H complex defect still persist with less intensity due to high thermal stability. Hydrogen bonding with native defect in ZnO lattice and their charge states are found to play a crucial role in achieving the donor and acceptor characteristics.</description><identifier>ISSN: 1932-7447</identifier><identifier>EISSN: 1932-7455</identifier><identifier>DOI: 10.1021/jp312209c</identifier><language>eng</language><publisher>Columbus, OH: American Chemical Society</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Exact sciences and technology ; Nanocrystals and nanoparticles ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures ; Physics</subject><ispartof>Journal of physical chemistry. C, 2013-02, Vol.117 (8), p.4299-4303</ispartof><rights>Copyright © 2013 American Chemical Society</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/jp312209c$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/jp312209c$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27129836$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Senthilkumar, K</creatorcontrib><creatorcontrib>Subramanian, M</creatorcontrib><creatorcontrib>Ebisu, H</creatorcontrib><creatorcontrib>Tanemura, M</creatorcontrib><creatorcontrib>Fujita, Y</creatorcontrib><title>Trapping and Recombination Properties of the Acceptor-like VZn-H Complex Defect in ZnO</title><title>Journal of physical chemistry. C</title><addtitle>J. Phys. Chem. C</addtitle><description>We report trapping and recombination centers with an acceptor-like character VZn and their defect complex in unintentional hydrogen-doped ZnO nanoparticles using photoluminescence and electron paramagnetic resonance (EPR) techniques. Further, we demonstrate the existence of a VZn–H complex defect related to local vibrational modes (LVMs) by Raman spectroscopy. EPR measurement confirms the characteristics of an uncompensated donor and acceptor under UV illumination in addition to the existence of multiple trapping centers even when the samples are subjected to high-temperature annealing; some of the LVMs related to VZn–H complex defect still persist with less intensity due to high thermal stability. Hydrogen bonding with native defect in ZnO lattice and their charge states are found to play a crucial role in achieving the donor and acceptor characteristics.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Exact sciences and technology</subject><subject>Nanocrystals and nanoparticles</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</subject><subject>Physics</subject><issn>1932-7447</issn><issn>1932-7455</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNpFkE9LwzAchoMoOKcHv0EuHqv50zbpcVTdhMFE5g67lDT9RVPbJCQV9NurKPP0voeXh5cHoUtKrilh9KYPnDJGKn2EZrTiLBN5URwfei5O0VlKPSEFJ5TP0G4bVQjWvWDlOvwE2o-tdWqy3uHH6APEyULC3uDpFfBCawiTj9lg3wDv9i5b4dqPYYAPfAsG9IStw3u3OUcnRg0JLv5yjp7v77b1Kltvlg_1Yp0pJumUCZqbUhkii1xyqTtoO1BEQNXxwpjWAO84y3VJGKEFrSrZMi26spVCA3DC-Bxd_XKDSloNJiqnbWpCtKOKnw0TlFWSl_87pVPT-_fovl81lDQ_0pqDNP4FzEZeZA</recordid><startdate>20130228</startdate><enddate>20130228</enddate><creator>Senthilkumar, K</creator><creator>Subramanian, M</creator><creator>Ebisu, H</creator><creator>Tanemura, M</creator><creator>Fujita, Y</creator><general>American Chemical Society</general><scope>IQODW</scope></search><sort><creationdate>20130228</creationdate><title>Trapping and Recombination Properties of the Acceptor-like VZn-H Complex Defect in ZnO</title><author>Senthilkumar, K ; Subramanian, M ; Ebisu, H ; Tanemura, M ; Fujita, Y</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a281t-714f6af0854838cdebdea07e9d35ffbfe3d324c6020151998b2c7d6b87cee3023</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Exact sciences and technology</topic><topic>Nanocrystals and nanoparticles</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Senthilkumar, K</creatorcontrib><creatorcontrib>Subramanian, M</creatorcontrib><creatorcontrib>Ebisu, H</creatorcontrib><creatorcontrib>Tanemura, M</creatorcontrib><creatorcontrib>Fujita, Y</creatorcontrib><collection>Pascal-Francis</collection><jtitle>Journal of physical chemistry. C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Senthilkumar, K</au><au>Subramanian, M</au><au>Ebisu, H</au><au>Tanemura, M</au><au>Fujita, Y</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Trapping and Recombination Properties of the Acceptor-like VZn-H Complex Defect in ZnO</atitle><jtitle>Journal of physical chemistry. C</jtitle><addtitle>J. Phys. Chem. C</addtitle><date>2013-02-28</date><risdate>2013</risdate><volume>117</volume><issue>8</issue><spage>4299</spage><epage>4303</epage><pages>4299-4303</pages><issn>1932-7447</issn><eissn>1932-7455</eissn><abstract>We report trapping and recombination centers with an acceptor-like character VZn and their defect complex in unintentional hydrogen-doped ZnO nanoparticles using photoluminescence and electron paramagnetic resonance (EPR) techniques. Further, we demonstrate the existence of a VZn–H complex defect related to local vibrational modes (LVMs) by Raman spectroscopy. EPR measurement confirms the characteristics of an uncompensated donor and acceptor under UV illumination in addition to the existence of multiple trapping centers even when the samples are subjected to high-temperature annealing; some of the LVMs related to VZn–H complex defect still persist with less intensity due to high thermal stability. Hydrogen bonding with native defect in ZnO lattice and their charge states are found to play a crucial role in achieving the donor and acceptor characteristics.</abstract><cop>Columbus, OH</cop><pub>American Chemical Society</pub><doi>10.1021/jp312209c</doi><tpages>5</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Nanocrystals and nanoparticles Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Physics |
| title | Trapping and Recombination Properties of the Acceptor-like VZn-H Complex Defect in ZnO |
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