Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for SiO2-Based Structure
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| Veröffentlicht in: | IEEE electron device letters 2013-02, Vol.34 (2), p.226-228 |
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| container_end_page | 228 |
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| container_issue | 2 |
| container_start_page | 226 |
| container_title | IEEE electron device letters |
| container_volume | 34 |
| creator | CHEN, Yu-Ting CHANG, Ting-Chang SZE, Simon M YANG, Po-Chun HUANG, Jheng-Jie TSENG, Hsueh-Chih HUANG, Hui-Chun YANG, Jyun-Bao CHU, Ann-Kuo GAN, Der-Shin TSAI, Ming-Jinn |
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| doi_str_mv | 10.1109/LED.2012.2232276 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2013-02, Vol.34 (2), p.226-228 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_26854301 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Switching, multiplexing, switched capacity circuits |
| title | Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for SiO2-Based Structure |
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