Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for SiO2-Based Structure

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Veröffentlicht in:	IEEE electron device letters 2013-02, Vol.34 (2), p.226-228
Hauptverfasser:	CHEN, Yu-Ting, CHANG, Ting-Chang, SZE, Simon M, YANG, Po-Chun, HUANG, Jheng-Jie, TSENG, Hsueh-Chih, HUANG, Hui-Chun, YANG, Jyun-Bao, CHU, Ann-Kuo, GAN, Der-Shin, TSAI, Ming-Jinn
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Switching, multiplexing, switched capacity circuits
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